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APM2506NU Datasheet Download - Anpec Electronics

Номер произв APM2506NU
Описание N-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2506NU Даташит, Описание, Даташиты
APM2506NU
Features
z 25V/60A,
RDS(ON)= 5m(typ.) @ VGS= 10V
RDS(ON)= 7m(typ.) @ VGS= 4.5V
z Super High Dense Cell Design
z Avalanche Rated
z Reliable and Rugged
N-Channel Enhancement Mode MOSFET
Pin Description
1
2
Pin 3
D
3
Pin 1
G
S
Pin 2
Applications
z Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
APM2506N
Lead Free Code
Handing Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device
Blank : Original Device
APM2506N U:
APM2506N
XXXXX
XXXXX – Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
1
www.anpec.com.tw







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APM2506NU Даташит, Описание, Даташиты
APM2506NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID Continuous Drain Current
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 pad area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Notes
* Current limited by bond wire
Rating
±25
±20
150
-55 to 150
150
80
60*
40
50
20
2.5
150
80
17
10
2.5
1
50
150
80
13
7
1.5
0.5
75
Unit
V
°C
°C
A
A
W
°C/W
A
A
W
°C/W
A
A
°C/W
°C/W
°C/W
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
2
www.anpec.com.tw







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APM2506NU Даташит, Описание, Даташиты
APM2506NU
Electrical Characteristics (TA=25°C)
Symbol
Parameter
Test Condition
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy ID=45A, VDD=15V
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
Diode
VSDa
Diode Forward Voltage
ISD=20A , VGS=0V
IS Diode continuous forward current TA=25°C
Dynamicb
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V
VDS=15V
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=15V, RL=15
IDS=1A, VGEN=10V,
RG=6
Gate Chargeb
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=20A
Notes
a : Pulse test ; pulse width300µs, duty cycle2%
b : Guaranteed by design, not subject to production testing
APM2506NU
Unit
Min. Typ. Max.
100 mJ
25 V
1 µA
1 1.5 2
V
±100 nA
56
m
7 10
0.7 1.3
40
V
A
3000
670
360
13
9
43
14
20
15
66
28
pF
pF
pF
ns
ns
ns
ns
32
6.6
12.4
42
nC
nC
nC
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
3
www.anpec.com.tw










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