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даташит APM2321A PDF ( Datasheet )

APM2321A Datasheet Download - Anpec Electronics

Номер произв APM2321A
Описание P-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2321A Даташит, Описание, Даташиты
APM2321A
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-1.2A ,
RDS(ON)=370m(typ.) @ VGS=-4.5V
RDS(ON)=560m
(typ.)
@
V =-2.5V
GS
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Top View of SOT-23
S
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM2321
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2321 A :
M21X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
1
www.anpec.com.tw







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APM2321A Даташит, Описание, Даташиты
APM2321A
Absolute
Maximum
Ratings
(T =
A
25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=-4.5V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
TA=25°C
TA=100°C
Rating
-20
±10
-1.2
-5
-1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-1.2A
VGS=-2.5V, IDS=-0.8A
VSDa Diode Forward Voltage
ISD=-0.5A, VGS=0V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-1.2A
APM2321A
Min. Typ. Max.
-20
-0.45 -0.6
370
560
-0.8
-1
-30
-1
±100
520
800
-1.3
6.8 9
1
1.1
Unit
V
µA
V
nA
m
V
nC
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
2
www.anpec.com.tw







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APM2321A Даташит, Описание, Даташиты
APM2321A
Electrical
Characteristics
(Cont.)
(T =
A
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
VDD=-10V, RL=10,
IDS=-1A, VGEN=-4.5V,
RG=6
Tf Turn-off Fall Time
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
APM2321A
Unit
Min. Typ. Max.
12.5
165
55
40
5
8
10
5
10
15
19
10
pF
ns
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
3
www.anpec.com.tw










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