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APM2321 Datasheet Download - Anpec Electronics

Номер произв APM2321
Описание P-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2321 Даташит, Описание, Даташиты
APM2321
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-0.9A
,
RDS(ON)=370m(typ.)
@
V =-4.5V
GS
RDS(ON)=560m(typ.)
@
V =-2.5V
GS
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
GS
Top View of SOT-23
S
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
Ordering and Marking Information
D
P-Channel MOSFET
APM2321
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50°C
H andling C ode
TR : Tape & Reel
APM2321A :
M21X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
-20
V
±10
-0.9
A
-3.6
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
1
www.anpec.com.tw







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APM2321 Даташит, Описание, Даташиты
APM2321
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθjA
Parameter
Maximum Power Dissipation TA=25°C
TA=100°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
1.25
0.5
150
-55 to 150
100
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=-16V , VGS=0V
VGS(th)
IGSS
Ra
DS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VDS=VGS , IDS=-250µA
VGS=±10V , VDS=0V
VGS=-4.5V , IDS=-0.9A
VGS=-2.5V , IDS=-0.8A
VSDa Diode Forward Voltage
Dynamicb
ISD=-0.5A , VGS=0V
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=-10V , IDS= -0.9A ,
VGS=-4.5V
Turn-on Delay Time
Turn-on Rise Time
VDD=-10V , IDS=-0.9A ,
Turn-off Delay Time
Turn-off Fall Time
VGEN=-4.5V , RG=6
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
APM2321
Min. Typ. Max.
Unit
-20 V
-1 µA
-0.6 -0.8 -1
±100
V
nA
370 520
560 800
m
-0.8 -1.3
V
6.8 9
1
1.1
5 10
8 12
9.6 15
5 10
165
55
40
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
2
www.anpec.com.tw







No Preview Available !

APM2321 Даташит, Описание, Даташиты
APM2321
Typical Characteristics
Output Characteristics
5
-VGS=4,5,6,7,8,9,10V
4
-VGS=3V
3
2
1 -VGS=2V
0
012345
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
3.6
3.0
2.4
1.8
TJ=125°C
1.2
0.6 TJ=25°C
TJ=-55°C
0.0
0.0 0.5 1.0 1.5 2.0 2.5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.6
-IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
1.0
0.8
0.6 -VGS=2.5V
-VGS=4.5V
0.4
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
-ID - Drain Current (A)
3.5
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
3
www.anpec.com.tw










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