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APM2313A Datasheet Download - Anpec Electronics

Номер произв APM2313A
Описание P-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2313A Даташит, Описание, Даташиты
APM2313A
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-2.5A ,
RDS(ON)=108m(typ.) @ VGS=-4.5V
RDS(ON)=135m
(typ.)
@
V =-2.5V
GS
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Top View of SOT-23
S
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM2313
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2313 A :
M13X
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
1
www.anpec.com.tw







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APM2313A Даташит, Описание, Даташиты
APM2313A
Absolute
Maximum
Ratings
(T =
A
25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=-4.5V
TA=25°C
TA=100°C
Rating
-20
±10
-2.5
-10
-1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2313A
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-20
V
IDSS Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
TJ=85°C
-1
µA
-30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-0.45 -0.7 -1
V
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
±100 nA
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
VGS=-4.5V, IDS=-2.5A
VGS=-2.5V, IDS=-2A
ISD=-0.5A, VGS=0V
108 140
m
135 175
-0.8 -1.3 V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
5.3 7
1 nC
0.6
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
2
www.anpec.com.tw







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APM2313A Даташит, Описание, Даташиты
APM2313A
Electrical
Characteristics
(Cont.)
(T =
A
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V, RL=10
IDS=-1A, VGEN=-4.5V,
RG=6
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
APM2313A
Min. Typ. Max.
9.2
435
120
65
8 16
7 15
18 35
8 15
Unit
pF
ns
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
3
www.anpec.com.tw










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