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Número de pieza | APM2305A | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | Anpec Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM2305A (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! APM2305A
P-Channel Enhancement Mode MOSFET
Features
• -16V/-3.5A,
RDS(ON)=60mΩ (typ.) @ VGS=-4.5V
RDS(ON)=70mΩ
(typ.)
@
V =-2.5V
GS
RDS(ON)=83mΩ
(typ.)
@
V =-1.8V
GS
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Pin Description
Top View of SOT-23
S
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM2305
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2305 A :
M05X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
1
www.anpec.com.tw
1 page APM2305A
Typical Characteristics (Cont.)
Output Characteristics
14
12
V = -3,-4,-5,-6,-7,-8,-9,-10V
GS
10
8
6
-2V
4
2
-1V
0
012345
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
130
120
110
100 V = -1.8V
GS
90
80
V = -2.5V
GS
70
V = -4.5V
GS
60
50
40
30
0 2 4 6 8 10 12 14
-ID - Drain Current (A)
Transfer Characteristics
14
12
10 T =-55oC
j
8
T =25oC
j
6
T =125oC
j
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=
-250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Aug., 2005
5
www.anpec.com.tw
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet APM2305A.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM2305 | P-Channel Enhancement Mode MOSFET | Etc |
APM2305 | P-Channel Enhancement Mode MOSFET | Anpec Electronics |
APM2305A | P-Channel Enhancement Mode MOSFET | Etc |
APM2305A | P-Channel Enhancement Mode MOSFET | Anpec Electronics |
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