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APM2305 PDF даташит

Спецификация APM2305 изготовлена ​​​​«Anpec Electronics» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв APM2305
Описание P-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2305 Даташит, Описание, Даташиты
APM2305
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-16V/-3.5A
,
RDS(ON)=60m(typ.)
@
V =-4.5V
GS
RDS(ON)=70m(typ.)
@
V =-2.5V
GS
RDS(ON)=83m(typ.) @ VGS=-1.8V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
3
12
GS
Top View of SOT-23
S
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
G
D
P-Channel MOSFET
APM2305
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
APM2305 A :
M05X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-16
V
±8
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
-3.5
A
-12
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003
1
www.anpec.com.tw









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APM2305 Даташит, Описание, Даташиты
APM2305
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθjA
Parameter
Maximum Power Dissipation TA=25°C
TA=100°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
1.25
0.5
150
-55 to 150
100
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Ra
DS(ON)
Resistance
VDS=-6.5V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±8V , VDS=0V
VGS=-4.5V , IDS=-3.5A
VGS=-2.5V , IDS=-3A
VGS=-1.8V , IDS=-2A
VSDa Diode Forward Voltage
Dynamicb
ISD=-1.25A , VGS=0V
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=-5V , IDS=-1A
VGS=-4.5V
Turn-on Delay Time
Turn-on Rise Time
VDD=-10V , IDS=-1A ,
Turn-off Delay Time
Turn-off Fall Time
VGEN=-4.5V , RG=6
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
APM2305
Min. Typ. Max.
Unit
-16 V
-1 µA
-0.5 -0.7 -1
±100
V
nA
60 70
70 85 m
83 105
-0.7 -1.3
V
12.7
1.75
2.8
12
25
52
18
1290
300
210
15
21
42
85
32
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003
2
www.anpec.com.tw









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APM2305 Даташит, Описание, Даташиты
APM2305
Typical Characteristics
Output Characteristics
12
-VGS=2,3,4,5,6,7,8,9,10V
10
8
6 -VGS=1.5V
4
2
-VGS=1V
0
012345
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
12
10
8
6
4 TJ=125°C
2 TJ=25°C
TJ=-55°C
0
0.0 0.5 1.0 1.5 2.0 2.5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.10
0.09
0.08
-VGS=2.5V
0.07
-VGS=4.5V
0.06
0.05
0.04
0
2 4 6 8 10
-ID - Drain Current (A)
12
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2003
3
www.anpec.com.tw










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