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даташит APM2301A PDF ( Datasheet )

APM2301A Datasheet Download - Anpec Electronics

Номер произв APM2301A
Описание P-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2301A Даташит, Описание, Даташиты
APM2301A
Features
-20V/-2.8A,
RDS(ON)=72m(typ.) @ VGS=-10V
RDS(ON)=98m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23
S
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
G
D
P-Channel MOSFET
APM2301A
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2301A A : A01X
X - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
1
www.anpec.com.tw







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APM2301A Даташит, Описание, Даташиты
APM2301A
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10sec.
VGS=-10V
TA=25°C
TA=100°C
Rating
-20
±16
-2.8
-10
-1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
STATIC CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
RDS(ON) a Drain-Source On-State Resistance
VSDa Diode Forward Voltage
GATE CHARGE CHARACTERISTICS b
VGS=-10V, IDS=-2.8A
VGS=-4.5V, IDS=-2.5A
ISD=-1.25A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-2.8A
APM2301A
Min. Typ. Max.
-20 -
-
- - -1
- - -30
-0.55 -0.7 -1.5
- - ±100
- 72 85
- 98 110
- -0.7 -1.3
- 7.6 10
- 3.2 -
-2-
Unit
V
µA
V
nA
m
V
nC
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
2
www.anpec.com.tw







No Preview Available !

APM2301A Даташит, Описание, Даташиты
APM2301A
Electrical
Characteristics
(Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
DYNAMIC CHARACTERISTICSb
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V, RL=10,
IDS=-1A, VGEN=-4.5V,
RG=6
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
APM2301A
Min. Typ. Max.
- 11 -
- 450 -
- 100 -
- 60 -
- 11 22
- 32 55
- 38 68
- 32 55
Unit
pF
ns
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
3
www.anpec.com.tw










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