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APM2055N Datasheet Download - Anpec Electronics

Номер произв APM2055N
Описание N-Channel Enhancement Mode MOSFET
Производители Anpec Electronics
логотип Anpec Electronics логотип 

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APM2055N Даташит, Описание, Даташиты
APM2055N
N-Channel Enhancement Mode MOSFET
Features
20V/12A,
RDS(ON)=55m(typ.)
@
V =10V
GS
RDS(ON)=75m(typ.) @ VGS=4.5V
RDS(ON)=140m(typ.) @ VGS=2.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
Applications
Switching Regulators
Switching Converters
Pin Description
123
GD S
Top View of TO-252
1 23
GDS
Top View of SOT-223
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM2055N
H andling C ode
Temp. Range
Package Code
Package Code
U : TO -252
V : SO T-223
O peration Junction Tem p. Range
C : -55 to 150° C
H andling C ode
TR : Tape & Reel
APM2055N U :
APM2055N
XXXXX
XX XXX - D ate Code
APM2055N V :
APM2055N
XXXXX
XX XXX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
V
±16
ID Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
12
A
20
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
1
www.anpec.com.tw







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APM2055N Даташит, Описание, Даташиты
APM2055N
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθjA
Parameter
Maximum Power Dissipation
TA=25°C
TA=100°C
TO-252
SOT-223
TO-252
SOT-223
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
50
3
10
1.2
150
-55 to 150
50
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VSD Diode Forward Voltage
Dynamic
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Test Condition
VGS=0V, ID=250µA
VDS=16V, VGS=0V
VDS=VGS, ID=250µA
VGS=±16V, VDS=0V
VGS=10V, ID=12A
VGS=4.5V, ID=6A
VGS=2.5V, ID=2A
IS=2A, VGS=0V
VDS=15V, VGS=4.5V,
ID=1.5A
VDD=15V, ID=2A,
VGS=10V, RG=6
APM2055N
Min. Typ. Max. Unit
20 V
1 µA
0.7 0.9 1.5
V
±100 nA
55 70
75 90 m
140 160
0.7 1.3
V
7 8.5
2.5 nC
1.5
9.2 18.6
14 27
ns
31 58
16 21
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
2
www.anpec.com.tw







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APM2055N Даташит, Описание, Даташиты
APM2055N
Typical Characteristics
Output Characteristics
20
VGS=4,5,6,7,8,9,10V
16
VGS=3V
12
8
4 VGS=2V
0
012345
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
TJ=125°C
4 TJ=25°C
TJ=-55°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
VGS=4.5V
VGS=10V
0.025
0.000
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
3
www.anpec.com.tw










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