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даташит K3386 PDF ( Datasheet )

K3386 Datasheet Download - NEC

Номер произв K3386
Описание 2SK3386
Производители NEC
логотип NEC логотип 

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K3386 Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3386
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3386 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3386
PACKAGE
TO-251
FEATURES
Low On-state Resistance
5 RDS(on)1 = 21 mMAX. (VGS = 10 V, ID = 17 A)
5 RDS(on)2 = 36 mMAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
2SK3386-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
5 Drain Current (Pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±34
±120
40
1.0
150
–55 to +150
28
78
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.13 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14471EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000







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K3386 Даташит, Описание, Даташиты
2SK3386
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 17 A
RDS(on)2 VGS = 4.0 V, ID = 17 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 17 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 17 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 34 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS(on) = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 34 A, VGS = 0 V
Reverse Recovery Time
trr IF = 34 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
17 21 m
25 36 m
1.5 2.0 2.5 V
10 19
S
10 µA
±10 µA
2100
pF
340 pF
170 pF
32 ns
310 ns
98 ns
100 ns
39 nC
7.0 nC
12 nC
0.87 V
46 ns
84 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14471EJ1V0DS00







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K3386 Даташит, Описание, Даташиты
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SK3386
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14471EJ1V0DS00
3










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