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даташит STP20N65M5 PDF ( Datasheet )

STP20N65M5 Datasheet Download - STMicroelectronics

Номер произв STP20N65M5
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STP20N65M5 Даташит, Описание, Даташиты
STB20N65M5, STI20N65M5,
STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
VDS @
TJmax
RDS(on)
max
ID
710 V 0.19 Ω 18 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
TAB
2
1
D2PAK
3
TAB
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
Marking
20N65M5
Package
D2PAK
I2PAK
TO-220
TO-247
February 2013
This is information on a product in full production.
Doc ID 022865 Rev 2
Packaging
Tape and reel
Tube
1/21
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STP20N65M5 Даташит, Описание, Даташиты
Contents
Contents
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 022865 Rev 2







No Preview Available !

STP20N65M5 Даташит, Описание, Даташиты
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (1) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. ISD 18 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Value
± 25
18
11.3
72
130
15
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
D2PAK
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 1 Oz copper board.
30
Value
I2PAK,
TO-220
0.96
62.5
Unit
TO-247
°C/W
50 °C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
tj=25°C, Id= IAR; Vdd=50 V)
Value
4
270
Unit
A
mJ
Doc ID 022865 Rev 2
3/21










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