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PDF STP20N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STP20N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB20N65M5, STI20N65M5,
STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
VDS @
TJmax
RDS(on)
max
ID
710 V 0.19 Ω 18 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
2
1
D2PAK
3
TAB
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
Marking
20N65M5
Package
D2PAK
I2PAK
TO-220
TO-247
February 2013
This is information on a product in full production.
Doc ID 022865 Rev 2
Packaging
Tape and reel
Tube
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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Min.
-
Typ.
43
7.5
7.5
11.5
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
18 A
72 A
1.5 V
288 ns
4 µC
27 A
342 ns
4.7 µC
28 A
Doc ID 022865 Rev 2
5/21
5 Page 
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 9. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Package mechanical data
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 022865 Rev 2
11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet STP20N65M5.PDF ] | |
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