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APT8M80K Datasheet Download - Microsemi

Номер произв APT8M80K
Описание N-Channel MOSFET
Производители Microsemi
логотип Microsemi логотип 

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APT8M80K Даташит, Описание, Даташиты
APT8M80K
800V, 8A, 1.35Ω MAX,
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
APT8M80K
Single die MOSFET
G
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
D
S
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Ratings
8
5
25
±30
285
4
Unit
A
V
mJ
A
Min Typ Max Unit
225 W
0.56
°C/W
0.11
-55 150
°C
300
0.07 oz
1.2 g
10 in·lbf
1.1 N·m







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APT8M80K Даташит, Описание, Даташиты
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 4A
VGS = VDS, ID = 0.5mA
800
3
IDSS Zero Gate Voltage Drain Current
VDS = 800V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT8M80K
Typ Max Unit
V
0.87 V/°C
1.06 1.35
Ω
45V
-10 mV/°C
100 µA
500
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 4A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 533V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 4A,
VDS = 400V
Resistive Switching
VDD = 533V, ID = 4A
RG = 10Ω 6 , VGG = 15V
Typ
6
1335
23
135
65
31
43
7
22
8
11
33
10
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 4A, TJ = 25°C, VGS = 0V
ISD = 4A, VDD = 100V 3
diSD/dt = 100A/µs, TJ = 25°C
ISD 4A, di/dt 1000A/µs, VDD = 533V,
TJ = 125°C
Min
Typ
825
3
Max Unit
8
A
25
1.3 V
ns
µC
10 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 35.63mH, RG = 25Ω, IAS = 4A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = 4.24E-9/VDS^2 + 5.44E-9/VDS + 2.10E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.







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APT8M80K Даташит, Описание, Даташиты
16
VGS = 10V
14
12
10
TJ = -55°C
TJ = 25°C
8
6
4
TJ = 125°C
2
TJ = 150°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 4A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
10
TJ = -55°C
8
TJ = 25°C
6 TJ = 125°C
4
2
0
012345
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 4A
14
6
12
VDS = 160V
10
VDS = 400V
8
6
VDS = 640V
4
2
0
0 10 20 30 40 50 60 70
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
8
TJ = 125°C
7
6
VGS= 10, & 15V
VGS= 6, & 6.5V
APT8M80K
5.5V
5
4
3 5V
2
1 4.5V
4V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
25
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
15
TJ = -55°C
10
TJ = 25°C
5
TJ = 125°C
0
01 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
2,000
1,000
Ciss
100
Coss
10
Crss
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
25
20
15
TJ = 25°C
10 TJ = 150°C
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage










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