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APT20F50S PDF даташит

Спецификация APT20F50S изготовлена ​​​​«Microsemi» и имеет функцию, называемую «N-Channel FREDFET».

Детали детали

Номер произв APT20F50S
Описание N-Channel FREDFET
Производители Microsemi
логотип Microsemi логотип 

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APT20F50S Даташит, Описание, Даташиты
APT20F50B
APT20F50S
500V, 20A, 0.30Ω Max,Trr 200nS
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO-247
D3PAK
APT20F50B
APT20F50S
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Ratings
20
13
60
±30
405
10
Unit
A
V
mJ
A
Min Typ Max Unit
290 W
0.43
°C/W
0.15
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com









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APT20F50S Даташит, Описание, Даташиты
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 10A
VGS = VDS, ID = 0.5mA
500
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
AP20F50B_S
Typ Max Unit
V
0.60 V/°C
0.25 0.30
Ω
45V
-10 mV/°C
100 μA
500
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specied
Test Conditions
Min
VDS = 50V, ID = 10A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 10A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 10A
RG = 10Ω 6 , VGG = 15V
Typ
14
2950
40
320
185
95
75
17
34
13
15
34
11
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 10, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 10A 3
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 10A, di/dt 1000A/μs, VDD = 333V,
TJ = 125°C
20
A
60
1.0
175 200
310 370
0.62
1.47
6.6
8.9
V
ns
μC
A
20 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 8.10mH, RG = 25Ω, IAS = 10A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.05E-7/VDS^2 + 2.44E-8/VDS + 6.99E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.









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APT20F50S Даташит, Описание, Даташиты
70
VGS = 10V
60
TJ = -55°C
50
40
TJ = 25°C
30
20
TJ = 150°C
10
TJ = 125°C
0
0 5 10 15 20 25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 10A
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
25
TJ = -55°C
20
TJ = 25°C
15
TJ = 125°C
10
5
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 10A
14
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0
0 20 40 60 80 100 120
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
35
TJ = 125°C
30
25
APT20F50B_S
VGS= 7 &10V
6.5V
20 6V
15
5.5V
10
5 5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
50 @ <0.5 % DUTY CYCLE
40
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
10
0
0
4,000
12345678
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1,000
100 Coss
10 Crss
0 100 200 300 400 500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
60
50
40
TJ = 25°C
30
TJ = 150°C
20
10
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Drain Current vs Source-to-Drain Voltage










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