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APT18F60S Datasheet Download - Microsemi

Номер произв APT18F60S
Описание N-Channel FREDFET
Производители Microsemi
логотип Microsemi логотип 

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APT18F60S Даташит, Описание, Даташиты
APT18F60B
APT18F60S
600V, 19A, 0.37Ω Max, trr 200ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO-247
D3PAK
APT18F60B
APT18F60S
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Ratings
19
12
65
±30
495
9
Unit
A
V
mJ
A
Min Typ Max Unit
335 W
0.37
°C/W
0.15
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com







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APT18F60S Даташит, Описание, Даташиты
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 9A
600
VGS(th)
VGS(th)/TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = VDS, ID = 1mA
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT18F60B_S
Typ Max Unit
V
0.57 V/°C
.31 0.37
Ω
45V
-10 mV/°C
250
1000
μA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specied
Test Conditions
Min
VDS = 50V, ID = 9A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 9A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 9A
RG = 4.7Ω 6 , VGG = 15V
Typ
17
3550
36
325
175
90
90
19
37
20
23
60
18
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
G
ISD = 9A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 9A 3
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 9A, di/dt 1000A/μs, VDD = 400V,
TJ = 125°C
D
S
19
A
65
1.0
175 200
315 380
0.65
1.56
6.7
9.2
V
ns
μC
A
20 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 12.2mH, RG = 25Ω, IAS = 9A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.







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APT18F60S Даташит, Описание, Даташиты
60
VGS = 10V
50
TJ = -55°C
40
TJ = 25°C
30
20
10 TJ = 150°C
TJ = 125°C
00 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 9A
2.5
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
30
25 TJ = -55°C
TJ = 25°C
20
TJ = 125°C
15
10
5
0
0 5 10 15
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 9A
14
20
12
VDS = 120V
10
VDS = 300V
8
6
4 VDS = 480V
2
0
0 20 40 60 80 100 120 140
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
25
TJ = 125°C
20
VGS= 7 &,8V
APT18F60B_S
15 6V
10
5.5V
5
5V
4.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
65
60 VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
55 @ <0.5 % DUTY CYCLE
50
45
40
35 TJ = -55°C
30
25 TJ = 25°C
20
15
TJ = 125°C
10
5
0
01 2 3 4 5 6 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
5,000
Ciss
1000
100 Coss
10 Crss
0 100 200 300 400 500 600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
65
60
55
50
45
40
35 TJ = 25°C
30
25 TJ = 150°C
20
15
10
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage










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