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STI300N4F6 Datasheet Download - STMicroelectronics

Номер произв STI300N4F6
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STI300N4F6 Даташит, Описание, Даташиты
STI300N4F6
N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™
Power MOSFET in a I²PAK package
Datasheet — production data
Features
Order code
STI300N4F6
VDS
40 V
RDS(on) max
ID
2.2 mΩ
160 A(1)
1. Limited by wire bonding
Standard level VGS(th)
100% avalanche rated
Applications
Automotive switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
123
I²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order code
STI300N4F6
Marking
300N4F6
Package
I²PAK
S(3)
AM01474v1
Packaging
Tube
February 2013
This is information on a product in full production.
Doc ID 18062 Rev 2
1/13
www.st.com
13







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STI300N4F6 Даташит, Описание, Даташиты
Contents
Contents
STI300N4F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 18062 Rev 2







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STI300N4F6 Даташит, Описание, Даташиты
STI300N4F6
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID(1)
ID (1)
IDM(2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
IAV
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAV, VDD=35 V)
Tstg Storage temperature
Tj Operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
40
± 20
160
160
640
300
160
1100
- 55 to 175
Unit
V
V
A
A
A
W
A
mJ
°C
Value
0.5
62.5
Unit
°C/W
Doc ID 18062 Rev 2
3/13










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