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STF20N65M5 Datasheet Download - STMicroelectronics

Номер произв STF20N65M5
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STF20N65M5 Даташит, Описание, Даташиты
STF20N65M5, STFI20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in TO-220FP and I2PAKFP packages
Datasheet — production data
Features
Order codes
STF20N65M5
STFI20N65M5
VDS @
TJmax
RDS(on)
max
710 V 0.19 Ω
ID
18 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
2
1
TO-220FP
123
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STF20N65M5
STFI20N65M5
Marking
20N65M5
Package
TO-220FP
I2PAKFP (TO-281)
February 2013
This is information on a product in full production.
Doc ID 024223 Rev 1
Packaging
Tube
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STF20N65M5 Даташит, Описание, Даташиты
Contents
Contents
STF20N65M5, STFI20N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STF20N65M5 Даташит, Описание, Даташиты
STF20N65M5, STFI20N65M5
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s;
TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature
2. ISD 18 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
tj=25°C, Id= IAR; Vdd=50 V)
Electrical ratings
Value
± 25
18(1)
11.3(1)
72(1)
30
15
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V
°C
°C
Value
4.17
62.5
Value
4
270
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 024223 Rev 1
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