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PDF STF20N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STF20N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF20N65M5, STFI20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in TO-220FP and I2PAKFP packages
Datasheet — production data
Features
Order codes
STF20N65M5
STFI20N65M5
VDS @
TJmax
RDS(on)
max
710 V 0.19 Ω
ID
18 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
2
1
TO-220FP
123
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STF20N65M5
STFI20N65M5
Marking
20N65M5
Package
TO-220FP
I2PAKFP (TO-281)
February 2013
This is information on a product in full production.
Doc ID 024223 Rev 1
Packaging
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STF20N65M5, STFI20N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17 and
Figure 20)
Min.
-
Typ.
43
7.5
7.5
11.5
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
18 A
72 A
1.5 V
288 ns
4 µC
27 A
342 ns
4.7 µC
28 A
Doc ID 024223 Rev 1
5/15
5 Page 
STF20N65M5, STFI20N65M5
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Doc ID 024223 Rev 1
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STF20N65M5.PDF ] | |
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