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PDF STL45N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STL45N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL45N65M5
N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ M5
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL45N65M5
VDS @
TJmax.
710 V
RDS(on)
max.
0.086 Ω
ID PTOT
22.5 A 160 W
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STL45N65M5
Table 1: Device summary
Marking
Package
45N65M5
PowerFLAT™ 8x8 HV
Packing
Tape and reel
October 2015
DocID023354 Rev 2
This is information on a product in full production.
1/16
www.st.com
1 page  
STL45N65M5
Electrical characteristics
Symbol
ISD(1)
ISDM(1)(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 22.5 A
ISD = 22.5 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 17: "
Test circuit for inductive load
switching and diode recovery
times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/µs,
VDD = 100 V, TJ = 150 °C (see
Figure 17: " Test circuit for
inductive load switching and
diode recovery times")
Min. Typ. Max. Unit
- 22.5 A
- 90 A
- 1.5 V
- 346
ns
-6
µC
- 35
A
- 432
- 8.4
ns
µC
- 39
A
Notes:
(1) The value is rated according to Rthj-case and limited by package.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID023354 Rev 2
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5 Page 
STL45N65M5
Package information
4.1 PowerFLAT 8x8 HV package information
Figure 21: PowerFLAT™ 8x8 HV package outline
DocID023354 Rev 2
8222871_Rev_3_ A
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STL45N65M5.PDF ] | |
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