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STB27NM60ND Datasheet Download - STMicroelectronics

Номер произв STB27NM60ND
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STB27NM60ND Даташит, Описание, Даташиты
STB27NM60ND,
STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II
Power MOSFETs (with fast diode) in D2PAK and TO-247 packages
Datasheet - production data
Features
TAB
3
1
D2PAK
TO-247
3
2
1
Figure 1. Internal schematic diagram
$4!" 
'
3
!-V
Order codes VDS@ Tjmax RDS(on) max ID
STB27NM60ND
STW27NM60ND
650 V
0.16 Ω 21 A
Designed for automotive applications and
AEC-Q101 qualified
The worldwide best RDS(on)*area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Applications
Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB27NM60ND
STW27NM60ND
Table 1. Device summary
Marking
Packages
27NM60ND
D²PAK
27NM60ND
TO-247
October 2013
This is information on a product in full production.
DocID15406 Rev 4
Packaging
Tape and reel
Tube
1/19
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STB27NM60ND Даташит, Описание, Даташиты
Contents
Contents
STB27NM60ND, STW27NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 DocID15406 Rev 4







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STB27NM60ND Даташит, Описание, Даташиты
STB27NM60ND, STW27NM60ND
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt(2)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
600
±25
21
13
84
160
40
Tstg Storage temperature
TJ Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD 21 A, di/dt 600 A/µs, VDD = 80% V(BR)DSS
–55 to 150
150
Symbol
Table 3. Thermal data
Parameter
D²PAK
TO-247
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
0.78
50
30
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAS, VDD = 50 V)
10
850
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DocID15406 Rev 4
3/19
19










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