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Номер произв MTP50P03HDLG
Описание Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MTP50P03HDLG Даташит, Описание, Даташиты
MTP50P03HDLG
Power MOSFET
50 Amps, 30 Volts, Logic Level P−Channel
TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
These are Pb−Free Devices*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
30
Drain−Gate Voltage (RGS = 1.0 MW)
VDGR
30
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp 10 ms)
ID 50
ID 31
IDM 150
Total Power Dissipation
Derate above 25°C
PD 125
1.0
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient, when mounted with
the minimum recommended pad size
EAS 1250 mJ
RqJC
RqJA
°C/W
1.0
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
50 AMPERES, 30 VOLTS
RDS(on) = 25 mW
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO−220AB
CASE 221A
STYLE 5
M50P03HDLG
AYWW
1
2
3
1
Gate
2
Drain
3
Source
M50P03HDL = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTP50P03HDLG TO−220AB
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1
Publication Order Number:
MTP50P03HDL/D







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MTP50P03HDLG Даташит, Описание, Даташиты
MTP50P03HDLG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 3.0) (Note 3)
Static Drain−to−Source On−Resistance
(VGS = 5.0 Vdc, ID = 25 Adc)
(Cpk 3.0) (Note 3)
Drain−to−Source On−Voltage (VGS = 10 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 25 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc, RG = 2.3 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 24 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS =50 Adc, VGS = 0 Vdc)
(IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 15)
(IS = 50 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Symbol Min Typ Max Unit
V(BR)DSS
30
− 26
Vdc
− mV/°C
IDSS
mAdc
− − 1.0
− − 10
IGSS
− − 100 nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
Vdc
1.0 1.5 2.0
− 4.0 − mV/°C
− 0.020 0.025
W
Vdc
− 0.83 1.5
− − 1.3
15 20
mhos
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
− 3500 4900 pF
− 1550 2170
− 550 770
− 22 30 ns
− 340 466
− 90 117
− 218 300
74 100
nC
− 13.6 −
− 44.8 −
− 35 −
− 2.39 3.0
− 1.84 −
− 106 −
− 58 −
− 48 −
− 0.246 −
Vdc
ns
mC
− 3.5 −
− 4.5 −
− 7.5 −
nH
nH
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MTP50P03HDLG Даташит, Описание, Даташиты
MTP50P03HDLG
TYPICAL ELECTRICAL CHARACTERISTICS
100
TJ = 25°C
80
60
40
VGS = 10 V
8V
6V
5V
4.5 V
4V
3.5 V
20 3 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
VDS 10 V
80
TJ = - 55°C
25°C
100°C
60
40
20
0
1.5 1.9 2.3 2.7 3.1 3.5 3.9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4.3
0.029
VGS = 5.0 V
0.027
0.025
0.023
0.021
TJ = 100°C
25°C
0.019
0.017
- 55°C
0.015
0
20 40 60 80
ID, DRAIN CURRENT (AMPS)
100
Figure 3. On−Resistance versus Drain Current
and Temperature
0.022
TJ = 25°C
0.021
VGS = 5 V
0.020
0.019
0.018
0.017
0.016
10 V
0.015
0
20 40 60 80
ID, DRAIN CURRENT (AMPS)
100
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.35
VGS = 5 V
ID = 25 A
1.25
1.15
1.05
1000
VGS = 0 V
100
TJ = 125°C
0.95
0.85
- 50
- 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
100°C
10
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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