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APT15F50K Datasheet Download - Microsemi

Номер произв APT15F50K
Описание N-Channel FREDFET
Производители Microsemi
логотип Microsemi логотип 

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APT15F50K Даташит, Описание, Даташиты
APT15F50K_KF
500V, 15A, 0.39Ω Max, trr 190ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
APT15F50KF
APT15F50K
G
Single die FREDFET
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage 2
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol
PD
RθJC
RθJC
RθCS
TJ,TSTG
TL
Parameter
Power Dissipation (TC = 25°C) [K]
Power Dissipation (TC = 25°C) [KF]
Junction to Case Thermal Resistance [K]
Junction to Case Thermal Resistance [KF]
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw
15F50K 15F50KF
15 6.2
10 3.9
45 18.6
±30
305
7
Unit
A
V
mJ
A
Min
-55
Typ
0.11
0.07
1.2
Max
223
37
0.56
3.3
150
300
10
1.1
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Microsemi Website - http://www.microsemi.com







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APT15F50K Даташит, Описание, Даташиты
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 7A
VGS = VDS, ID = 0.5mA
500
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS = 50V, ID = 7A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
APT15F50K_KF
Typ Max Unit
V
0.60 V/°C
0.33 0.39
Ω
45V
-10 mV/°C
250
1000
μA
±100 nA
Typ Max Unit
11 S
2250
30
240
140 pF
70
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current
K
IS (Body Diode)
KF
Pulsed Source Current
ISM (Body Diode) 1
K
KF
VGS = 0 to 10V, ID = 7A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 7A
RG = 10Ω 6 , VGG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
G
D
S
55
13 nC
26
10
12 ns
26
8
Min Typ Max Unit
15
6.2
A
45
18.6
VSD
trr
Qrr
Irrm
dv/dt
Diode Forward Voltage 3
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ISD = 7A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 7A 3
VDD = 100V
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD 7A, di/dt 1000A/μs, VDD = 333V,
TJ = 125°C
1.0
190
340
0.54
1.27
5.9
7.9
20
V
ns
μC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 12.45mH, RG = 25Ω, IAS = 7A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -5.22E-8/VDS^2 + 1.21E-8/VDS + 3.48E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.







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APT15F50K Даташит, Описание, Даташиты
50
45 VGS = 10V
40
TJ = -55°C
35
30
25 TJ = 25°C
20
15
10 TJ = 125°C
5 TJ = 150°C
0
0 5 10 15 20 25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 7A
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
18
16
TJ = -55°C
14
TJ = 25°C
12
10 TJ = 125°C
8
6
4
2
00 2 4 6 8 10 12
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 7A
14
14
12
VDS = 160V
10
VDS = 400V
8
6
VDS = 640V
4
2
0
0 20 40 60 80 100
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
25
TJ = 125°C
20
VGS= 7, & 10V
APT15F50K_KF
6.5V
15 6V
10
5.5V
5 5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
45
VDS> ID(ON) x RDS(ON) MAX.
40 250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
25
TJ = -55°C
20
TJ = 25°C
15
TJ = 125°C
10
5
0
0
4,000
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
1,000
Ciss
100 Coss
10 Crss
1 0 100 200 300 400 500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
45
40
35
30
25
TJ = 25°C
20
TJ = 150°C
15
10
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage










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