DataSheet26.com

даташит STH270N4F3-2 PDF ( Datasheet )

STH270N4F3-2 Datasheet Download - STMicroelectronics

Номер произв STH270N4F3-2
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

1Page
		

No Preview Available !

STH270N4F3-2 Даташит, Описание, Даташиты
STH270N4F3-2
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ F3
Power MOSFET in H2PAK-2 package
Datasheet production data
Features
TAB
2
3
1
H2PAK-2
Figure 1. Internal schematic diagram
' 7$%
Order codes
STH270N4F3-2
VDS
40 V
RDS(on) max ID
1.7 mΩ 180 A
Conduction losses reduced
Low profile, very low parasitic inductance, high
current package
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
* 
6 
*,3')65
Order code
STH270N4F3-2
Table 1. Device summary
Marking
Package
270N4F3
H2PAK-2
Packaging
Tape and reel
May 2015
This is information on a product in full production.
DocID16957 Rev 3
1/16
www.st.com
16







No Preview Available !

STH270N4F3-2 Даташит, Описание, Даташиты
Contents
Contents
STH270N4F3-2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 H2PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 DocID16957 Rev 3







No Preview Available !

STH270N4F3-2 Даташит, Описание, Даташиты
STH270N4F3-2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS
ID (1)
ID (1)
IDM (2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT
EAS(3)
Total dissipation at TC = 25 °C
Single pulse avalanche energy
Tstg Storage temperature
Tj Operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=80 A, VDD=32 V
40
± 20
180
180
720
300
1000
- 55 to 175
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Value
0.5
35
Unit
V
A
A
A
W
mJ
°C
°C
Unit
°C/W
°C/W
DocID16957 Rev 3
3/16










Всего страниц 16 Pages
Скачать PDF[ STH270N4F3-2.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
STH270N4F3-2N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
STH270N4F3-6Power MOSFETsSTMicroelectronics
STMicroelectronics

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2018    |   Контакты    |    Поиск