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PDF STH270N4F3-2 Data sheet ( Hoja de datos )
| Número de pieza | STH270N4F3-2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STH270N4F3-2
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ F3
Power MOSFET in H2PAK-2 package
Datasheet − production data
Features
TAB
2
3
1
H2PAK-2
Figure 1. Internal schematic diagram
' 7$%
Order codes
STH270N4F3-2
VDS
40 V
RDS(on) max ID
1.7 mΩ 180 A
• Conduction losses reduced
• Low profile, very low parasitic inductance, high
current package
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
*
6
*,3')65
Order code
STH270N4F3-2
Table 1. Device summary
Marking
Package
270N4F3
H2PAK-2
Packaging
Tape and reel
May 2015
This is information on a product in full production.
DocID16957 Rev 3
1/16
www.st.com
16
1 page  
STH270N4F3-2
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1)
ISDM (2)
VSD (3)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 180 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 160 A, di/dt = 100 A/µs
VDD = 32 V, TJ=150 °C
(see Figure 15)
1. Current limited by package
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration=300 µs, duty cycle 1.5%
-
-
-
-
-
-
180 A
720 A
1.5 V
70 ns
225 nC
3.2 A
DocID16957 Rev 3
5/16
5 Page 
STH270N4F3-2
Dim.
A
A1
C
e
E
F
H
H1
L
L1
L2
L3
L4
M
R
V
Package information
Table 8. H²PAK-2 mechanical data
mm
Min.
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
2.6
0.20
0°
Typ.
-
Max.
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
2.9
0.60
8°
DocID16957 Rev 3
11/16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STH270N4F3-2.PDF ] | |
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