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STDLED656 Datasheet Download - STMicroelectronics

Номер произв STDLED656
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STDLED656 Даташит, Описание, Даташиты
STDLED656, STFILED656,
STPLED656, STULED656
N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET
in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet preliminary data
Features
TAB
Order codes VDS
RDS(on)
max
ID PTOT
3
1
DPAK
t(s)TAB
roduc3
2
1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STDLED656
STFILED656
STPLED656
STULED656
650 V
1.3 Ω
6.0 A
70 W
25 W
70 W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Applications
LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED656
STFILED656
STPLED656
STULED656
Table 1. Device summary
Marking
Package
LED656
DPAK
I2PAKFP (TO-281)
TO-220
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024429 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22







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STDLED656 Даташит, Описание, Даташиты
Contents
Contents
STDLED656, STFILED656, STPLED656, STULED656
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 DocID024429 Rev 1







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STDLED656 Даташит, Описание, Даташиты
STDLED656, STFILED656, STPLED656, STULED656
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, TO-220
IPAK
I2PAKFP
Unit
VDS Drain- source voltage
650 V
VGS Gate- source voltage
±30 V
ID
t(s)ID
cIDM (2)
uPTOT
rodIAR
te PEAS
soleESD
Obdv/dt(3)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Gate-source human body model (C=100
pF, R=1.5 kΩ)
Peak diode recovery voltage slope
-VISO
t(s)Tstg
cTJ
Insulation withstand voltage (AC)
Storage temperature
Operating junction temperature
u1. Limited only by maximum temperature allowed
rod2. Pulse width limited by safe operating area
P3. ISD 5.4 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS.
6.0
3.3
24.0
30
5.4
6.0(1)
3.3(1)
24.0(1)
110
2.5
A
A
A
W
A
kV
12
2500
- 55 to 150
150
V/ns
V
°C
°C
oleteTable 3. Thermal data
Obs Symbol
Parameter
Value
Unit
DPAK I²PAKFP TO-220 IPAK
Rthj-case
Rthj-amb
Rthj-pcb
Thermal resistance junction-case max.
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max.
50
4.17
62.5
- 1.14 °C/W
- 100 °C/W
- °C/W
DocID024429 Rev 1
3/22










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