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STP180NS04ZC Datasheet Download - STMicroelectronics

Номер произв STP180NS04ZC
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STP180NS04ZC Даташит, Описание, Даташиты
STP180NS04ZC
N-channel 40 V clamped 3.6 mtyp., 120 A
fully protected SAFeFET™ Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Order code
VDS
RDS(on) max ID
STP180NS04ZC 40 V clamped 4.2 mΩ 120 A
Low capacitance and gate charge
100% avalanche tested
175 °C maximum junction temperature
Applications
Switching and linear applications
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
Description
This fully clamped Power MOSFET is
manufactured using an advanced mesh overlay
process which is based on an innovative strip
layout. The benefits of this technology, coupled
with the extra clamping capabilities render this
device particularly suitable for the harshest
operating conditions, such as those associated
with the automotive environment. The device is
also suitable for other applications that require a
high degree of ruggedness.
S(3)
Order code
STP180NS04ZC
Table 1. Device summary
Marking
Package
P180NS04ZC
TO-220
Packaging
Tube
March 2013
This is information on a product in full production.
DocID14603 Rev 2
1/14
www.st.com
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STP180NS04ZC Даташит, Описание, Даташиты
Contents
Contents
STP180NS04ZC
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID14603 Rev 2







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STP180NS04ZC Даташит, Описание, Даташиты
STP180NS04ZC
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS
VDG
VGS
(2)
ID
(2)
ID
IDG
IGS
(3)
IDM
PTOT
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain gate current (continuous)
Gate-source current (continuous)
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
(1)
41
(1)
33
(1)
± 20
120
120
±50
±50
480
330
2.2
ESD
Gate-source human body model
(C = 100 pF, R = 1.5 kΩ)
±8
ESD
Gate-drain human body model
(C = 100 pF, R = 1.5 kΩ)
±8
ESD
Drain-source human body model
(C = 100 pF, R = 1.5 kΩ)
±8
TJ Operating junction temperature
Tstg Storage temperature
1. Voltage is limited by Zener diodes
2. Current limited by wire bonding
3. Pulse width limited by safe operating area
-55 to 175
Symbol
Table 3. Thermal data
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.45
62.5
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
kV
kV
°C
Unit
°C/W
°C/W
DocID14603 Rev 2
3/14










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