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PDF STD9NM40N Data sheet ( Hoja de datos )
| Número de pieza | STD9NM40N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET
in DPAK and TO-220 packages
Datasheet — production data
Features
Order codes
STD9NM40N
STP9NM40N
VDSS@TJMAX RDS(on)max. ID
450 V
< 0.79 Ω 5.6 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TAB
3
1
DPAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STD9NM40N
STP9NM40N
Marking
9NM40N
Packages
DPAK
TO-220
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 023762 Rev 2
1/18
www.st.com
18
1 page  
STD9NM40N, STP9NM40N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 200 V, ID = 5.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min.
-
Typ.
7
4.4
25
8.8
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5.6 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.6 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
5.6 A
22.4 A
1.5 V
187 ns
1.3 µC
14 A
224 ns
1.5 µC
13 A
Doc ID 023762 Rev 2
5/18
5 Page 
STD9NM40N, STP9NM40N
Table 9. DPAK (TO-252) mechanical data
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
1
0.60
0°
mm
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
Package mechanical data
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8°
Doc ID 023762 Rev 2
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STD9NM40N.PDF ] | |
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