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STB15N65M5 Datasheet Download - STMicroelectronics

Номер произв STB15N65M5
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STB15N65M5 Даташит, Описание, Даташиты
STB15N65M5,
STD15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET
in D2PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB15N65M5
STD15N65M5
VDS @
TJmax
RDS(on)
max
ID
710 V < 0.34 Ω 11 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STB15N65M5
STD15N65M5
Marking
15N65M5
Package
D2PAK
DPAK
Packaging
Tape and reel
November 2012
This is information on a product in full production.
Doc ID 023207 Rev 1
1/19
www.st.com
19







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STB15N65M5 Даташит, Описание, Даташиты
Contents
Contents
STB15N65M5, STD15N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
.......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 023207 Rev 1







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STB15N65M5 Даташит, Описание, Даташиты
STB15N65M5, STD15N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (1) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. ISD 11 A, di/dt 400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
TJ = 25 °C, ID= IAR; VDD=50 V)
Value
± 25
11
6.9
44
85
15
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
°C
Value
D2PAK
DPAK
1.47
30 50
Unit
°C/W
°C/W
Value
2.5
160
Unit
A
mJ
Doc ID 023207 Rev 1
3/19










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