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даташит STP100N10F7 PDF ( Datasheet )

STP100N10F7 Datasheet Download - STMicroelectronics

Номер произв STP100N10F7
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STP100N10F7 Даташит, Описание, Даташиты
STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™
2
Power MOSFET in D PAK, DPAK, TO-220FP and TO-220
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
' Ć7$%
* 
Features
Order codes V
DS
RDS(on)
max
STB100N10F7
STD100N10F7
100 V 0.008 Ω
STF100N10F7
STP100N10F7
Ultra low on-resistance
100% avalanche tested
IP
D TOT
80 A
80 A
45 A
80A
120 W
120W
30 W
150 W
Applications
Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
6 
$0Y
Order codes
STB100N10F7
STD100N10F7
STF100N10F7
STP100N10F7
Table 1. Device summary
Marking
Packages
2
D PAK
100N10F7
DPAK
TO-220FP
TO-220
November 2013
This is information on a product in full production.
DocID023737 Rev 4
Packaging
Tape and reel
Tape and reel
Tube
Tube
1/23
www.st.com
23







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STP100N10F7 Даташит, Описание, Даташиты
Contents
Contents
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23 DocID023737 Rev 4







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STP100N10F7 Даташит, Описание, Даташиты
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
TO-220
DPAK TO-220FP D2PAK
Unit
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
(2)
IDM
(1)
PTOT
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
TJ Operating junction temperature
Tstg Storage temperature
1. This value is limited by package..
2. Pulse width limited by safe operating area.
100
± 20
(1)
80 45
80
(1)
62 32
70
320 180 320
120 30 150
-55 to 175
V
V
A
A
A
W
°C
°C
Symbol
Table 3. Thermal resistance
Parameter
D2PAK
Value
DPAK TO-220FP TO-220
Unit
Rthj-case Thermal resistance junction-case
1
Thermal resistance junction-
Rthj-amb ambient
(1)
Rthj-pcb Thermal resistance junction-pcb
30
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
1.25
50
51
62.50
°C/W
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Single pulse avalanche energy
EAS
(TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V)
Value
400
Unit
mJ
DocID023737 Rev 4
3/23










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