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PDF STPLED625 Data sheet ( Hoja de datos )
| Número de pieza | STPLED625 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STFILED625, STPLED625
N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET
in I2PAKFP and TO-220 packages
Datasheet − preliminary data
Features
Order codes VDS
RDS(on)
max
ID PTOT
uct(s)1 2 3
rodI²PAKFP
TAB
3
2
1
TO-220
olete PFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STFILED625
620 V
STPLED625
1.6 Ω
25 W
5.0 A
70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STFILED625
STPLED625
Table 1. Device summary
Marking
Package
LED625
I2PAKFP (TO-281)
TO-220
Packaging
Tube
March 2013
DocID024425 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
1 page  
STFILED625, STPLED625
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.2 A, VGS = 0
4.2 A
-
16.8 A
- 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 19)
290
- 1900
13
ns
nC
A
trr
Qrr
)IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
t(s1. Pulse width limited by safe operating area
c2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
320
- 2200
14
ns
nC
A
ProduTable 8. Gate-source Zener diode
teSymbol
Parameter
Test conditions
soleV(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min. Typ. Max. Unit
30 -
-V
- ObThe built-in back-to-back Zener diodes have been specifically designed to enhance not only
)the device’s ESD capability, but also to make them capable of safely absorbing any voltage
t(stransients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ProducThe integrated Zener diodes thus eliminate the need for external components.
DocID024425 Rev 1
5/15
5 Page 
STFILED625, STPLED625
Package mechanical data
Table 9. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min. Typ. Max.
A 4.40
4.60
B 2.50
2.70
D 2.50
2.75
D1 0.65
0.85
E 0.45
0.70
F 0.75
1.00
t(s)F1 1.20
G 4.95 - 5.20
ucH 10.00
10.40
rodL1 21.00
23.00
PL2 13.20
14.10
teL3 10.55
10.85
leL4 2.70
3.20
soL5 0.85
1.25
bL6 7.30
7.50
Obsolete Product(s) - OFigure 23. I2PAKFP (TO-281) drawing
DocID024425 Rev 1
UHY$
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STPLED625.PDF ] | |
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