STPLED625H Datasheet PDF - STMicroelectronics
| Part Number | STPLED625H | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
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STFILED625H, STPLED625H,
STULED625H
N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET
in I2PAKFP, TO-220 and IPAK packages
Datasheet − production data
Features
Order codes
VDS
RDS(on)
max
ID PTOT
)1
t(s2 3
TAB I²PAKFP
roduc3
2
1
te PTO-220
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STFILED625H
25 W
STPLED625H 620 V 2 Ω 6.0 A
70 W
STULED625H
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Table 1. Device summary
Order codes
Marking
Package
Packaging
STFILED625H
I2PAKFP (TO-281)
STPLED625H
LED625H
TO-220
Tube
STULED625H
IPAK
April 2013
This is information on a product in full production.
DocID024475 Rev 1
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www.st.com
17
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STFILED625H, STPLED625H, STULED625H
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5.4 A, VGS = 0
3.8 A
-
15.2 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 22)
220
- 1.4
13
ns
µC
A
trr
Qrr
)IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 22)
t(s1. Pulse width limited by safe operating area
c2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
270
- 1.9
14
ns
µC
A
ProduTable 8. Gate-source Zener diode
teSymbol
Parameter
Test conditions
soleV(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min. Typ. Max. Unit
30 -
-V
- ObThe built-in back-to-back Zener diodes have been specifically designed to enhance not only
)the device’s ESD capability, but also to make them capable of safely absorbing any voltage
t(stransients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ProducThe integrated Zener diodes thus eliminate the need for external components.
DocID024475 Rev 1
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| Information | Total 17 Pages | |
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| Download | [ STPLED625H.PDF Datasheet ] | |
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