2SK4198FS PDF даташит
Спецификация 2SK4198FS изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | 2SK4198FS |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
7 Pages
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Ordering number : ENA1370C
2SK4198FS
N-Channel Power MOSFET
600V, 5A, 2.34Ω, TO-220F-3FS
http://onsemi.com
Features
• ON-resistance RDS(on)=1.8Ω (typ.)
• 10V drive
• Input capacitance Ciss=360pF (typ.)
• Repetitive avalanche guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
IDc *1
IDpack *2
IDP
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
600 V
±30 V
5A
4A
18 A
Allowable Power Dissipation
PD Tc=25°C (Our ideal heat dissipation condition)*3
2.0 W
30 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
55 mJ
Avalanche Current *5
Avalanche Energy (Repetition)
IAV
EAR
Limited only by maximum temperature Tch=150°C
4.5 A
3 mJ
Note :*1 Shows chip capability.
*2 Package limited.
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=5mH, IAV=4.5A (Fig.1)
*5 L≤5mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
2SK4198FS
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
K4198
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
O1712 TKIM TC-00002825/70710 TKIM TC-00002401/31010 TKIM TC-00002278/N2608QB MSIM TC-00001732 No. A1370-1/7
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2SK4198FS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
min
600
Ratings
typ
3
1.2 2.4
1.8
360
69
15
13
28
39
15
14.3
3.0
8.2
0.9
max
100
±100
5
2.34
1.2
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
≥50Ω
RG
L
PW≤10μs
D.C.≤1%
VGS=10V
VDD=200V
ID=2.5A
RL=78Ω
VOUT
D
2SK4198FS
10V
0V
50Ω
VDD
G
P.G
50Ω
S
2SK4198FS
Ordering Information
Device
2SK4198FS
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No. A1370-2/7
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2SK4198FS
ID -- VDS
12
Tc=25°C
10 10V
15V
8 8V
6
4
2
6V
0 VGS=5V
0 5 10 15 20 25 30
6 Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT13521
ID=2.5A
5
14 ID -- VGS
VDS=20V
12
10 Tc= --25°C
8 25°C
6 75°C
4
2
0
0 2 4 6 8 10 12 14 16 18 20
6
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT13522
5
4
3 Tc=75°C
2 25°C
1 --25°C
0
5 6 7 8 9 10 11 12 13 14 15
7
Gate-to-So| uyrcfse V|ol-t-ageI,DVGS -- V
IT13523
5 VDS=20V
3 25°C
2
1.0
Tc=
--25°C
75°C
7
5
3
2
0.1
0.1
5
3
2
23
5 7 1.0
23
Drain Current,
SW Time
I-D-
-- A
ID
5 7 10
IT13525
VDD=200V
VGS=10V
100
7
5
3
2
10
7
0.1
td(off)
tr
td(on)
tf
23
5 7 1.0
23
Drain Current, ID -- A
5 7 10
IT13527
4
3
2
V GS=10V, I D=2.5A
1
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
2
1000
7
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT13524
VGS=0V
0.4 0.6 0.8 1.0 1.2 1.4
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT13526
f=1MHz
Ciss
100
7
Coss
5
3
2 Crss
10
7
0 10 20 30 40 50
Drain-to-Source Voltage, VDS -- V IT13528
No. A1370-3/7
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