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PDF STFILED624 Data sheet ( Hoja de datos )
| Número de pieza | STFILED624 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STDLED624, STFILED624,
STPLED624, STULED624
N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET
in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet − preliminary data
Features
TAB
3
Order codes VDS
RDS(on)
max
ID PTOT
1
DPAK
t(s)TAB
roduc3
2
1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
STDLED624
STFILED624
STPLED624
STULED624
620 V
2.5 Ω
4.0 A
45 W
20 W
45 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
ct(s) - OG(1)
olete ProduS(3)
AM01476v1
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance, superior dynamic performance and
high avalanche capability, making them suitable
for the buck-boost and flyback topology.
Obs Table 1. Device summary
Order codes
Marking
Package
Packaging
STDLED624
STFILED624
STPLED624
LED624
DPAK
I2PAKFP (TO-281)
TO-220
Tape and reel
Tube
STULED624
IPAK
March 2013
DocID024407 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22
1 page  
STDLED624, STFILED624, STPLED624, STULED624
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 2.7 A, VGS = 0
2.7 A
-
10.8 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
190
ISD = 2.7 A, di/dt = 100 A/µs - 825
VDD = 60 V (see Figure 21)
9
ns
nC
A
trr Reverse recovery time
ISD = 2.7 A, di/dt = 100 A/µs
255
ns
Qrr
)IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 21)
t(s1. Pulse width limited by safe operating area.
c2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
- 1100
10
nC
A
ProduTable 9. Gate-source Zener diode
teSymbol
Parameter
Test conditions
oleV(BR)GSO
Gate-source breakdown
voltage
IGS=± 1 mA (open drain)
Min. Typ. Max. Unit
30 -
-V
ObsThe built-in back-to-back Zener diodes have specifically been designed to enhance not only
) -the device’s ESD capability, but also to make them safely absorb possible voltage transients
t(sthat may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
Obsolete Producintegrity. These integrated Zener diodes thus avoid the usage of external components.
DocID024407 Rev 1
5/22
5 Page 
STDLED624, STFILED624, STPLED624, STULED624
Package mechanical data
Table 10. DPAK (TO-252) mechanical data
mm
Dim.
Min. Typ. Max.
A 2.20
2.40
A1 0.90
1.10
A2 0.03
0.23
b 0.64
0.90
b4 5.20
5.40
c 0.45
t(s)c2 0.48
D 6.00
ucD1
rodE 6.40
PE1
tee
lee1 4.40
soH 9.35
bL 1.00
- O(L1)
t(s)L2
cL4 0.60
uR
Obsolete ProdV2 0°
0.60
0.60
6.20
5.10
6.60
4.70
2.28
4.60
10.10
1.50
2.80
0.80
1.00
0.20
8°
DocID024407 Rev 1
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet STFILED624.PDF ] | |
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