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RT1E050RP PDF даташит

Спецификация RT1E050RP изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «4V Drive Pch MOSFET».

Детали детали

Номер произв RT1E050RP
Описание 4V Drive Pch MOSFET
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RT1E050RP Даташит, Описание, Даташиты
4V Drive Pch MOSFET
RT1E050RP
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package.
3) 4V drive.
Application
Switching
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :UD
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RT1E050RP
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
30
20
5
20
1
20
1.25
Channel temperature
Tch 150
Range of storage temperature
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol Limits
Rth (ch-a)* 100
Unit
C / W
Inner circuit
(8)
(7) (6)
(5)
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
2
1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A









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RT1E050RP Даташит, Описание, Даташиты
RT1E050RP
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
3.1
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
26
36
40
-
1300
180
160
10
15
90
50
13
3.5
4.5
Max.
10
-
1
2.5
36
50
56
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=5A, VGS=10V
mID=2.5A, VGS=4.5V
ID=2.5A, VGS=4.0V
S ID=5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL=6.0
ns RG=10
nC ID=5A, VDD 15V
nC VGS=5V RL=3
nC RG=10
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=5A, VGS=0V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.04- Rev.A









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RT1E050RP Даташит, Описание, Даташиты
RT1E050RP
Electrical characteristics curves
5
VGS= -3.0V
Ta=25°C
4 Pulsed
3 VGS= -10V
2 VGS= -2.8V
VGS= -4.5V
1 VGS= -4.0V VGS= -2.5V
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics( )
5
VGS= -3.0V
4
Ta=25°C
Pulsed
VGS= -2.8V
3 VGS= -10V
VGS= -4.5V
2 VGS= -4.0V
1
VGS= -2.5V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical Output Characteristics( )
Data Sheet
10
VDS= -10V
Pulsed
1 Ta= 125°C
Ta= 75°C
Ta= 25°C
0.1 Ta= - 25°C
0.01
0.001
0123
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
1000 Ta=25°C
Pulsed
100
10
VGS= -4.0V
VGS= -4.5V
VGS= -10V
1000
VGS= -10V
Pulsed
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
VGS= -4.5V
Pulsed
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
1000
VGS= -4.0V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
10
VDS= -10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VGS=0V
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.04 - Rev.A










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