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Datasheet SP8K31 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SP8K31 | 4V Drive Nch+Nch MOSFET Transistor
4V Drive Nch+Nch MOSFET
SP8K31
SP8K31
zStructure Silicon N-channel MOSFET
zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).
zDimensions (Unit : mm)
SOP8
zApplications Switching
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
|  ROHM Semiconductor | mosfet |
| 2 | SP8K31FRA | 4V Drive Nch+Nch MOSFET Transistor
4V Drive Nch+Nch MOSFET
SP8KK3311FRA
SP8SKP381KF3R1A
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).
zApplications Switching
zPackaging dimensions
Package
Type
Co | ROHM Semiconductor | mosfet |
SP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SP80001 | 800MHz Low-loss SAW Filter 53MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute
800MHz Low-loss SAW Filter 53MHz Bandwidth
Part Number: SP80001
www.sipatsaw.com
SIPAT Co., Ltd.
Specifications
Parameter Center Frequency
Insertion Loss 1 dB Bandwidth 3 dB Bandwidth 35 dB Bandwidth Pass  SIPAT filter | | |
| 2 | SP8005 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8005
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.5 @ VGS=4.5V 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON).  SamHop Microelectronics transistor | | |
| 3 | SP8006 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8006
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON SamHop Microelectronics transistor | | |
| 4 | SP8007 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). SamHop Microelectronics transistor | | |
| 5 | SP8008 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8008
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mo SamHop Microelectronics transistor | | |
| 6 | SP8009 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P SamHop Microelectronics transistor | | |
| 7 | SP8009E | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009E
Ver 1.5
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.0 @ VGS=10V 6.5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. E SamHop Microelectronics transistor | |
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