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PDF RUE003N02 Data sheet ( Hoja de datos )
| Número de pieza | RUE003N02 | |
| Descripción | 1.8V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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1.8V Drive Nch MOSFET
RUE003N02
Structure
Silicon N-channel
MOSFET
Dimensions (Unit : mm)
EMT3
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : QT
Applications
Switching
Packaging specifications
Type
Package
Code
Basic ordering unit
(pieces)
Taping
TL
3000
RUE003N02
Equivalent circuit
Drain
Gate
∗2
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Source
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
Total power dissipation
ID
IDP∗1
PD∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Limits
20
±8
±300
±600
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
°C / W
www.rohm.com
○c 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RUE003N02.PDF ] | |
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