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MCH3474 PDF даташит

Спецификация MCH3474 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв MCH3474
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MCH3474 Даташит, Описание, Даташиты
MCH3474
Power MOSFET
30V, 50m, 4A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
High Speed Switching
1.8V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30 V
Gate to Source Voltage
VGSS
±12 V
Drain Current (DC)
ID 4 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
16 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
1W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
125 °C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
50m@ 4.5V
72m@ 2.5V
130m@ 1.8V
ID Max
4A
ELECTRICAL CONNECTION
N-Channel
PACKING TYPE : TL MARKING
FF
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June 2015 - Rev. 1
1
Publication Order Number :
MCH3474/D









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MCH3474 Даташит, Описание, Даташиты
MCH3474
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
30 V
1 μA
±10 μA
0.4 1.3 V
2.0 3.4
S
38 50 mΩ
51 72 mΩ
80 130 mΩ
430 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=10V, f=1MHz
59 pF
38 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
10 ns
41 ns
36 ns
37 ns
4.7 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=15V, VGS=4.5V, ID=4A
Qgd
0.8 nC
1.1 nC
Forward Diode Voltage
VSD
IS=4A, VGS=0V
0.82 1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD=15V
VIN
4.5V
0V
PW=10μs
D.C.≤1%
VIN
G
ID=2A
RL=7.5Ω
D VOUT
P.G 50Ω
S MCH3474
www.onsemi.com
2









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MCH3474 Даташит, Описание, Даташиты
MCH3474
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