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PDF MIO2400-17E10 Data sheet ( Hoja de datos )
| Número de pieza | MIO2400-17E10 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advanced Technical Information
MIO 2400-17E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 2400 A
VCES
= 1700 V
VCE(sat) typ. = 2.3 V
CC C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 1000 V; VCEM CHIP = <1700 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
1700
V
± 20 V
2400
A
4800
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ①
IC = 2400 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES VCE = 1700 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 900 V;
IC = 2400 A; RG = 0.56 Ω;
Lσ = 60 nH
Cies
Coes
Cres
Q
ge
VCE = 25 V; VGE = 0 V; f = 1 MHz
I
C
=
2400
A;
V
CE
=
900
V;
VGE
=
±
15
V
RthJC
① Collector emitter saturation voltage is given at chip level
2.3 2.6 V
2.6 2.9 V
4.5 6.5 V
120 mA
500 nA
340
260
1050
270
600
980
ns
ns
ns
ns
mJ
mJ
230 nF
22 nF
10 nF
22 µC
0.007 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
1-6
1 page  
Advanced Technical Information
MIO 2400-17E10
1000
900
800
VCC = 900 V
RG = 0.56 ohm
Tvj = 125 °C
Lσ = 60 nH
2500
IRM
2000
700
600 Q RR 1500
500
400
E rec
300
1000
200 500
100
00
0 1000 2000 3000 4000 5000
IF [A]
Fig. 13 Typical reverse recovery characteristics
vs forward current
1000
900
800
Erec
700
VCC = 900 V
IF = 2400 A
Tvj = 125 °C
Lσ = 60 nH
2000
1800
1600
1400
600 1200
500 IRM 1000
QRR
400 800
300 600
200 400
100 200
00
012345
RG [ohm]
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
0.1
0.01
0.001
Zth(j-c) Diode
Zth(j-c) IGBT
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 15 Thermal impedance vs time
© 2004 IXYS All rights reserved
n
∑Zth (j-c) (t) = R i (1- e-t/τi )
i=1
i1
Ri(K/kW) 4.91
τi(ms) 189
Ri(K/kW) 8.17
τi(ms) 196
2
1.35
22
34
0.444 0.331
2.4 0.54
2.16 0.862 0.885
31 7.4 1.4
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIO2400-17E10.PDF ] | |
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