MIO1800-17E10 PDF даташит
Спецификация MIO1800-17E10 изготовлена «IXYS» и имеет функцию, называемую «IGBT Module». |
|
Детали детали
Номер произв | MIO1800-17E10 |
Описание | IGBT Module |
Производители | IXYS |
логотип |
6 Pages
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Advanced Technical Information
MIO 1800-17E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1800 A
VCES
= 1700 V
VCE(sat) typ. = 2.3 V
CC C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
t
SC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V
CC
=
1000
V;
VCEM
CHIP
=
<1700
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
1700
V
± 20 V
1800
A
3600
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ①
IC = 1800 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES VCE = 1700 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
t
d(on)
tr
td(off)
tf
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 900 V;
IC = 1800 A; RG = 0.82 Ω;
Lσ = 60 nH
Cies
Coes
Cres
Qge
VCE = 25 V; VGE = 0 V; f = 1 MHz
IC = 1800 A; VCE = 900 V; VGE = ± 15 V
RthJC
① Collector emitter saturation voltage is given at chip level
2.3 2.6 V
2.6 2.9 V
4.5 6.5 V
120 mA
500 nA
285 ns
230 ns
950 ns
240 ns
530 mJ
670 mJ
166
16.5
7.0
nF
nF
nF
15.1 µC
0.009 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-6
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Advanced Technical Information
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1800
16500
A
A
Symbol
Conditions
VF ②
IF = 1800 A; TVJ = 25°C
TVJ = 125°C
I
RM
trr
Q
RR
Erec
VCC = 900 V; IC = 1800 A;
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 60nH
RthJC
② Forward voltage is given at chip level
Characteristic Values
min. typ. max.
1.65 2.0 V
1.70 V
1470
870
770
530
A
ns
µC
mJ
0.017 K/W
Module
Symbol
TJM
TVJ
Tstg
V
ISOL
M
d
Conditions
max. junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+150
-40...+125
-40...+125
°C
°C
°C
4000
V~
4-6
8 - 10
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
dA
Clearance distance terminal to base
23
terminal to terminal 19
dS
Surface creepage terminal to base
33
distance
terminal to terminal 33
mm
mm
mm
mm
Lσ
R *)
term-chip
R
thCH
Weight
Module stray inductance, C to E terminal
Resistance terminal to chip
per module; λ grease = 1 W/m•K
10
0.085
0.006
1500
nH
mΩ
K/W
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF
MIO 1800-17E10
2-6
© 2004 IXYS All rights reserved
No Preview Available ! |
Advanced Technical Information
MIO 1800-17E10
3600
3200
2800
2400
2000
1600
17V
15V
13V
11V
9V
1200
800
400
Tvj = 25 °C
0
0123456
VCE [V]
Fig. 1 Typical output characteristics, chip level
3600
3200
2800
2400
25 °C
125 °C
2000
1600
1200
800
400
VGE = 15 V
0
012345
VCE [V]
Fig. 3 Typical onstate characteristics, chip level
20
VCC = 900 V
15
VCC = 1300
10
5
IC = 1800 A
Tvj = 25 °C
0
0 2 4 6 8 10 12 14
Qg [µC]
Fig. 5 Typical gate charge characteristics
© 2004 IXYS All rights reserved
3600
3200
2800
2400
2000
1600
17V
15V
13V
11V
9V
1200
800
400
Tvj = 125 °C
0
0123456
VCE [V]
Fig. 2 Typical output characteristics, chip level
3600
3200
VGE = 25 V
2800
2400
2000
1600
1200
800
400
125 °C
25 °C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGE [V]
Fig. 4 Typical transfer characteristics, chip level
1000
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
100
Coes
10
Cres
1
0 5 10 15 20 25 30 35
VCE [V]
Fig. 6 Typical capacitances vs
collector-emitter voltage
3-6
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Номер в каталоге | Описание | Производители |
MIO1800-17E10 | IGBT Module | IXYS |
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