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PDF MII100-12A3 Data sheet ( Hoja de datos )
| Número de pieza | MII100-12A3 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MII100-12A3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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IGBT (NPT) Module
Phase leg
Part number
MII100-12A3
MII100-12A3
VCES = 2x 1200 V
I C25 =
135 A
V =CE(sat)
2.2 V
7
6
4
5
Features / Advantages:
● NPT IGBT technology
● low saturation voltage
● low switching losses
● switching frequency up to 30 kHz
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for
easy parallelling
● MOS input, voltage controlled
● ultra fast free wheeling diodes
Backside: isolated
1
3
2
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: Y4
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
1 page  
MII100-12A3
IGBT
175
TVJ = 25°C
150
125
IC 100
[A] 75
50
25
V =17 V
GE
15 V
13 V
11 V
9V
175
TVJ = 125°C
150
125
IC 100
[A] 75
50
25
V =17 V
GE
15 V
13 V
11 V
9V
150
VCE = 20 V
TVJ = 25°C
125
100
IC
75
[A]
50
25
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE [V]
Fig. 1 Typ. output characteristics
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE [V]
Fig. 2 Typ. output characteristics
0
5 6 7 8 9 10 11
VGE [V]
Fig. 3 Typ. transfer characteristics
20
VCE = 600 V
IC = 75 A
15
VGE
10
[V]
5
0
0 100 200 300 400 500
QG [nC]
Fig. 4 Typ. turn-on gate charge
40 120 20 800
30
t
d(on)
Eon
20
90 15
t Eoff
60 10
t
d(off)
600
t
400
[mJ]
t
10 r
E
on
0
0 50
VCE = 600 V
VGE = ±15 V
RG = 15
TVJ = 125°C
100 150
[mJ]
[ns]
30 5
E
off
00
0
50
VCE = 600 V
VGE = ±15 V
RG = 15
TVJ = 125°C
[ns]
200
t
f
0
100 150
IC [A]
IC [A]
Fig. 5 Typ. turn on energy & switching
times versus collector current
Fig.6 Typ. turn off energy & switching
times versus collector current
0.25
0.20
ZthJC
0.15
[K/W]
0.10
0.05
single pulse
25
VCE = 600 V
VGE = ±15 V
20 IC = 75 A
TVJ = 125°C
Eon 15
[mJ] 10
E
on
5
t 200
d(on)
160
120
tt
r
80
25
20
Eoff
15
[mJ]
10
VCE = 600 V
VGE = ±15 V
IC = 75 A
TVJ = 125°C
E
off
[ns]
40 5
2000
t
d(off)
1600
t
1200
[ns]
800
400
10-4
10-3
10-2
10-1
100
t [s]
Fig. 12 Typical transient
thermal impedance
00
0 8 16 24 32 40 48 56
RG [ ]
Fig. 9 Typ. turn on energy & switching
times versus gate resistor
t
0 f0
0 8 16 24 32 40 48 56
RG [ ]
Fig. 9 Typ. turn off energy & switching
times versus gate resistor
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MII100-12A3.PDF ] | |
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