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PDF MIO600-65E11 Data sheet ( Hoja de datos )
| Número de pieza | MIO600-65E11 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
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Hay una vista previa y un enlace de descarga de MIO600-65E11 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MIO 600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 600 A
VCES = 6500 V
VCE(sat) typ = 4.2 V
CC
C
C' 5 7 9
3
G
2
E'
1 EE E
46
8
IGBT
Symbol
VCES
VGES
IC85
ICM
t
SC
Conditions
VGE = 0 V
TC = 85°C
tp = 1 ms; TC = 85°C
V=
CC
4400
V;
VCEM CHIP
=
<
6500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
6500 V
± 20 V
600 A
1200 A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 600 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
4.2 V
5.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 6500 V; VGE = 0 V; TVJ = 125°C
120 mA
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
500 nA
t
d(on)
tr
td(off)
tf
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 3600 V;
IC = 600 A; Lσ = 280 nH
RG = 3.9 Ω
RG = 3.9 Ω
RG = 2.7 Ω
RG = 2.7 Ω
RG = 3.9 Ω
RG = 2.7 Ω
620
270
1500
930
4250
3250
ns
ns
ns
ns
mJ
mJ
Cies
Coes
Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 600 A; VCE = 3600 V; VGE = ± 15 V
RthJC
Collector emitter saturation voltage is given at chip level
150
7.57
1.46
nF
nF
nF
9.65
µC
0.011 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1-5
1 page  
3000
2500
VCC = 3600 V
RG = 3.9 ohm
Tvj = 125 °C
Lσ = 280 nH
2000
1500
Erec
Qrr
1000
Irr
500
0
0
E rec [mJ] = -1.8 x 10 -3 x I F 2 + 3.93 x I F + 403
300 600 900 1200
IF [A]
Fig. 13 Typ. reverse recovery characteristics
versus forward current
1400
1200
1000
VCC ≤ 4400 V
di/dt ≤ 4000 A/µs
Tvj = 125 °C
Lσ ≤ 280 nH
800
600
400
200
0
0 1000 2000 3000 4000 5000 6000 7000
VR [V]
Fig. 15 Safe operating area diode (SOA)
Outline drawing
MIO 600-65E11
2500
2000
Qrr
1200
1000
1500
800
600
1000 Erec
Irr
500
0
0
400
VCC = 3600 V
IF = 600 A
Tvj = 125 °C
Lσ = 280 nH
200
0
1234
di/dt [kA/µs]
Fig. 14 Typ. reverse recovery characteristics
versus di/dt
0.1
0.01
Zth(j-c) Diode
Zth(j-c) IGBT
0.001
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 16 Thermal impedance vs. time
n
∑Zth (j-c) (t) = R i (1- e-t/τi )
i =1
IGBT
DIODE
i
Ri [K/kW]
ti [ms]
Ri [K/kW]
ti [ms]
1
8.5
151
17
144
2
2
5.84
4.2
5.83
© 2011 IXYS All rights reserved
20110119a
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MIO600-65E11.PDF ] | |
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