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PDF MIO1200-33E10 Data sheet ( Hoja de datos )
| Número de pieza | MIO1200-33E10 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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MIO 1200-33E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1200 A
VCES
= 3300 V
VCE(sat) typ. = 3.1 V
CC
C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 2500 V; VCEM CHIP = < 3300 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
3300
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.1 V
3.8 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA
500 nA
td(on)
tr
td(off)
t
f
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 1800 V;
IC = 1200 A; RG = 1.5 Ω;
Lσ = 100 nH
400
200
1070
440
1890
1950
ns
ns
ns
ns
mJ
mJ
Cies
Coes
Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V
RthJC
Collector emitter saturation voltage is given at chip level
187 nF
11.6 nF
2.2 nF
12.1 µC
0.0085 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
20110119a
1-6
1 page  
2000
1800
1600
E rec
Q RR
1400
1200
IRM
1000
800
VCC = 1800 V
600 RG = 1.5 ohm
VGE = ±15 V
400 Tvj = 125 °C
Lσ = 100 nH
200
0
0 500 1000 1500 2000 2500 3000
IF [A]
Fig. 13 Typical reverse recovery characteristics
vs forward current
MIO 1200-33E10
1800
1600
1400
1200
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
1000
800
600
400
QRR
Erec
IRM
200
0
0 5 10 15 20
RG [ohm]
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
0.1
0.01
0.001
Zth(j-c) Diode
Zth(j-c) IGBT
0.0001
0.001
0.01
0.1
t [s]
1
Fig. 15 Thermal impedance vs time
10
n
∑Zth JC(t) = Ri(1- e-t/τ i )
i=1
i1
Ri(K/kW) 5.50
τi(ms) 193
Ri(K/kW) 11.2
τi(ms) 189
234
1.53 0.621 0.646
31.2 8.0 1.48
3.73 1.30 0.42
24.5 2.69 2.36
© 2011 IXYS All rights reserved
20110119a
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIO1200-33E10.PDF ] | |
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