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PDF MIO1200-25E10 Data sheet ( Hoja de datos )
| Número de pieza | MIO1200-25E10 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
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Advanced Technical Information
MIO 1200-25E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1200 A
VCES
= 2500 V
VCE(sat) typ. = 2.5 V
CC C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
t
SC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V
CC
=
1800
V;
VCEM
CHIP
=
<
2500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ①
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.5 V
3.1 3.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 7.5 V
ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA
500 nA
td(on)
t
r
td(off)
t
f
Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V;
VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH
365
250
980
345
1150
1250
ns
ns
ns
ns
mJ
mJ
C
ies
Coes
C
res
VCE = 25 V; VGE = 0 V; f = 1 MHz
Q
ge
I
C
=
1200
A;
V
CE
=
1250
V;
VGE
=
±
15
V
RthJC
① Collector emitter saturation voltage is given at chip level
186 nF
13.7 nF
3.0 nF
12.2 µC
0.009 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-6
1 page  
Advanced Technical Information
MIO 1200-25E10
1600
1400
Q RR
1200
1000
IRM
E rec
800
600 VCC = 1250 V
RG = 1.5 ohm
400 VGE = ±15 V
Tvj = 125 °C
200 Lσ = 100 nH
0
0
500
1000
1500
2000
2500
IF [A]
Fig. 13 Typical reverse recovery characteristics
vs forward current
1200
1100
1000
900
800
700
600
500
400
300
VCC = 1250 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
1600
1400
1200
QRR
Erec
1000
800
600
IRM 400
200
200
100
00
0 5 10 15 20
RG [ohm]
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
0.1
0.01
0.001
Zth(j-c) Diode
Zth(j-c) IGBT
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 15 Thermal impedance vs time
n
∑Zth JC(t) = Ri(1- e-t/τ i )
i=1
i1
Ri(K/kW) 5.97
τi(ms) 179
Ri(K/kW) 11.1
τi(ms) 189
234
1.99 0.619 0.465
22 2.4 0.54
3.36 1.27 1.34
30 7.4 1.4
© 2004 IXYS All rights reserved
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIO1200-25E10.PDF ] | |
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