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Número de pieza | IXGH40N120A2 | |
Descripción | High Voltage IGBT | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2
IXGT 40N120A2
IXGH 40N120A2
IXGT 40N120A2
V = 1200
I CES = 75
V ≤C25
CE(sat)
2.0
V
A
V
Symbol Test Conditions
Maximum Ratings
VCES
VCES
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TTJsMtg
TL
TSOLD
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C, IGBT chip capability
TC = 110°C
TJ ≤ 150°C, tp < 300 μs
VGE = 15 V, TVJ = 150°C, RG = 5 Ω
Clamped inductive load, VCE < 960 V
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
Mounting torque (ixgh)
(IXGH)
(IXGT)
1200
1200
± 20
± 30
75
40
160
ICM = 80
V
V
V
V
A
A
A
A
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
260 °C
1.3/10 Nm/lb.in.
6.0 g
4.0 g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VGE(th)
VGE(th)
IC = 1 mA, VGE = 0 V
IC = 250 μA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC110, VGE = 15V
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
TJ = 125°C
50 μA
1mA
± 100 nA
2.0 V
TO-247 (IXFH)
G
CE
(TAB)
TO-268 (IXGT)
G = Gate
E = Emitter
G
E
C = Collector
TAb = Collector
C (TAB)
Features
• International standard packages
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
• Capacitor discharge
© 2005 IXYS All rights reserved
DS99509 (12/05)
1 page Fig. 13. Inductive Turn-on Switching Times vs.
Junction Temperature
110 25
100 24
90 I C = 80A
23
80
tr
td(on) - - - -
22
RG = 2Ω , VGE = 15V
70
VCE = 960V
21
60 20
50 I C = 40A
19
40 18
30 17
20
I C = 20A
10
16
15
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGH 40N120A2
IXGT 40N120A2
Fig. 14. Gate Charge
16
14 VCE = 600V
I C = 40A
12 I G = 10 mA
10
8
6
4
2
0
0 20 40 60 80 100 120 140
QG - NanoCoulombs
10,000
f = 1 MHz
Fig. 15. Capacitance
1,000
Cies
Coes
100
Cres
10
0
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 16. Reverse-Bias Safe Operating Area
90
80
70
60
50
40
30
20 TJ = 125ºC
RG = 5Ω
10 dV / dT < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXGH40N120A2.PDF ] |
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