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IXGN200N60A2 PDF даташит

Спецификация IXGN200N60A2 изготовлена ​​​​«IXYS» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )».

Детали детали

Номер произв IXGN200N60A2
Описание IGBT ( Insulated Gate Bipolar Transistor )
Производители IXYS
логотип IXYS логотип 

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IXGN200N60A2 Даташит, Описание, Даташиты
IGBT
Optimized for Switching
up to 5 kHz
IXGN 200N60A2
VCES
IC25
VCE(sat)
= 600 V
= 200 A
= 1.35 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
TJ
TJ
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
= 25°C to 150°C
= 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 2.0
Clamped inductive load
PC
TJ
TJM
Tstg
VISOL
Md
TC = 25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
E
Maximum Ratings
600 V
600 V
±20 V
±30 V
200 A
100 A
400 A
ICM = 200
@ 0.8 VCES
700
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
SOT-227B, miniBLOC
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International standard package
miniBLOC
z Aluminium nitride isolation
- high power dissipation
z Isolation voltage 3000 V~
z Very high current IGBT
z Low VCE(sat) for minimum on-state
conduction losses
z MOS Gate turn-on
- drive simplicity
z Low collector-to-case capacitance
(< 50 pF)
z Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 1 mA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
2.5 5.5 V
50 µA
2 mA
±400 nA
1.2 1.35 V
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
Advantages
z Easy to mount with 2 screws
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99087A(11/03)









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IXGN200N60A2 Даташит, Описание, Даташиты
IXGN 200N60A2
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 60 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
70 106
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
9900
740
190
pF
pF
pF
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
480 nC
63 nC
169 nC
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0
60 ns
45 ns
360 ns
250 ns
5 mJ
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4
60 ns
60 ns
3.0 mJ
290 ns
660 ns
12 mJ
0.17 K/W
0.05
K/W
SOT-227B miniBLOC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343









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IXGN200N60A2 Даташит, Описание, Даташиты
Fig. 1. Output Characte ristics
@ 25 Deg. C
200
VGE = 15V
9V
175 13V
11V
150
7V
125
100
75
50
25 5V
0
0.25 0.5 0.75 1 1.25 1.5 1.75
VC E - Volts
2
2.25
Fig. 3. Output Characteristics
@ 125 Deg. C
200
175
VGE = 15V
13V
150
11V
9V
7V
125
100
75
50
5V
25
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter Voltage
3.0
2.8 TJ = 25ºC
2.6
2.4
2.2
2.0
1.8
1.6 IC = 200A
1.4 100A
1.2 50A
1.0
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2003 IXYS All rights reserved
IXGN 200N60A2
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
350
VGE = 15V
300
13V
11V
9V
250
200
7V
150
100
50
0 5V
0 0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.4
1.3
1.2 VGE = 15V
1.1
IC = 200A
1.0
IC = 100A
0.9
0.8
0.7
0.6
-50
-25
IC = 50A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
350
300
250
200
150
TJ = 125ºC
100 25ºC
-40ºC
50
0
4 4.5 5 5.5 6 6.5 7 7.5 8
VG E - Volts










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Номер в каталогеОписаниеПроизводители
IXGN200N60AHiPerFAST IGBTIXYS Corporation
IXYS Corporation
IXGN200N60A2IGBT ( Insulated Gate Bipolar Transistor )IXYS
IXYS

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