IXGN200N60A2 PDF даташит
Спецификация IXGN200N60A2 изготовлена «IXYS» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
Номер произв | IXGN200N60A2 |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | IXYS |
логотип |
5 Pages
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IGBT
Optimized for Switching
up to 5 kHz
IXGN 200N60A2
VCES
IC25
VCE(sat)
= 600 V
= 200 A
= 1.35 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
TJ
TJ
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
= 25°C to 150°C
= 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω
Clamped inductive load
PC
TJ
TJM
Tstg
VISOL
Md
TC = 25°C
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
E
Maximum Ratings
600 V
600 V
±20 V
±30 V
200 A
100 A
400 A
ICM = 200
@ 0.8 VCES
700
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
SOT-227B, miniBLOC
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International standard package
miniBLOC
z Aluminium nitride isolation
- high power dissipation
z Isolation voltage 3000 V~
z Very high current IGBT
z Low VCE(sat) for minimum on-state
conduction losses
z MOS Gate turn-on
- drive simplicity
z Low collector-to-case capacitance
(< 50 pF)
z Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 1 mA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
2.5 5.5 V
50 µA
2 mA
±400 nA
1.2 1.35 V
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
Advantages
z Easy to mount with 2 screws
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99087A(11/03)
No Preview Available ! |
IXGN 200N60A2
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 60 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
70 106
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
9900
740
190
pF
pF
pF
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
480 nC
63 nC
169 nC
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0 Ω
60 ns
45 ns
360 ns
250 ns
5 mJ
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
60 ns
60 ns
3.0 mJ
290 ns
660 ns
12 mJ
0.17 K/W
0.05
K/W
SOT-227B miniBLOC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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Fig. 1. Output Characte ristics
@ 25 Deg. C
200
VGE = 15V
9V
175 13V
11V
150
7V
125
100
75
50
25 5V
0
0.25 0.5 0.75 1 1.25 1.5 1.75
VC E - Volts
2
2.25
Fig. 3. Output Characteristics
@ 125 Deg. C
200
175
VGE = 15V
13V
150
11V
9V
7V
125
100
75
50
5V
25
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter Voltage
3.0
2.8 TJ = 25ºC
2.6
2.4
2.2
2.0
1.8
1.6 IC = 200A
1.4 100A
1.2 50A
1.0
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2003 IXYS All rights reserved
IXGN 200N60A2
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
350
VGE = 15V
300
13V
11V
9V
250
200
7V
150
100
50
0 5V
0 0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.4
1.3
1.2 VGE = 15V
1.1
IC = 200A
1.0
IC = 100A
0.9
0.8
0.7
0.6
-50
-25
IC = 50A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
350
300
250
200
150
TJ = 125ºC
100 25ºC
-40ºC
50
0
4 4.5 5 5.5 6 6.5 7 7.5 8
VG E - Volts
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