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IXST40N60B PDF даташит

Спецификация IXST40N60B изготовлена ​​​​«IXYS» и имеет функцию, называемую «High Speed IGBT».

Детали детали

Номер произв IXST40N60B
Описание High Speed IGBT
Производители IXYS
логотип IXYS логотип 

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IXST40N60B Даташит, Описание, Даташиты
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B VCES =
IXST 40N60B IC25 =
VCE(sat) =
tfi typ
=
600V
75A
2.2V
100 ns
Preliminary data
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
T
JM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, VCC= 0.8 VCES
VGE= 15 V, VCE = 360 V, TJ = 125°C
R
G
=
22
W,
non
repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
75
40
150
ICM = 80
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
ms
280 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V
IC = 4 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
600
4
V
7V
25 mA
1 mA
±100 nA
2.2 V
TO-247 AD (IXSH)
G
C
E
TO-268 (D3) ( IXST)
(TAB)
G
E
(TAB)
G = Gate
E = Emitter
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast Fall Time for switching speeds
up to 50 kHz
Applications
• AC and DC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98521B (7/00)
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IXST40N60B Даташит, Описание, Даташиты
IXSH 40N60B
IXST 40N60B
Symbol
gfs
Cies
C
oes
Cres
Q
g
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE GE
16 23
3700
280
80
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
190 nC
45 nC
90 nC
Inductive load, TJ = 25°C
I = I , V = 15 V, L = 100 µH
C C90 GE
VCE = 0.8 VCES, RG = 2.7 W
50 ns
50 ns
110 200 ns
120 200 ns
1.8 2.6 mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 2.7 W
(IXSH40N60B)
55 ns
170 ns
1.7 mJ
190 ns
180 ns
2.0 mJ
0.45 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
© 2000 IXYS All rights reserved
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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Номер в каталогеОписаниеПроизводители
IXST40N60BHigh Speed IGBTETC
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IXST40N60BHigh Speed IGBTIXYS
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