PDF IXGT10N170 Data sheet ( Hoja de datos )

Número de pieza	IXGT10N170
Descripción	High Voltage IGBT
Fabricantes	IXYS
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No Preview Available ! High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE(sat) ≤ 1700V 10A 4.0V TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 16Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 TJ = 125°C Maximum Ratings 1700 V 1700 V ± 20 V ± 30 V 20 A 10 A 70 A ICM = 20 @ 0.8 • VCES 110 A W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in. 6g 4g Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 50 μA 500 μA ±100 nA 2.7 4.0 V 3.4 G CE TO-268 (IXGT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) © 2008 IXYS CORPORATION, All rights reserved DS98992A(10/08) 1 page Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 350 RG = 16Ω 300 VGE = 15V VCE = 850V 250 I C = 20A 200 150 I C = 10A 100 50 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 400 65 380 t r td(on) - - - - TJ = 125ºC, VGE = 15V 360 VCE = 850V 340 I C = 20A 60 55 50 320 I C = 10A 45 300 40 280 35 260 30 240 25 10 20 30 40 50 60 70 80 90 100 RG - Ohms Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1400 210 1200 1000 t f td(off) - - - - RG = 16Ω, VGE = 15V VCE = 850V 190 170 800 150 600 130 400 TJ = 125ºC, 25ºC 200 110 90 0 70 4 6 8 10 12 14 16 18 20 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved IXGH10N170 IXGT10N170 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 350 300 RG = 16Ω VGE = 15V 250 VCE = 850V 200 TJ = 125ºC 150 100 50 TJ = 25ºC 0 4 6 8 10 12 14 16 18 IC - Amperes 20 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature 800 160 t f td(off) - - - - 700 RG = 16Ω, VGE = 15V 150 I C = 10A VCE = 850V 600 140 500 130 400 120 300 200 I C = 20A 110 100 100 90 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 700 500 650 t f td(off) - - - - 600 TJ = 125ºC, VGE = 15V 550 VCE = 850V 450 400 350 500 450 I C = 10A 300 250 400 200 350 300 I C = 20A 150 100 250 50 200 0 10 20 30 40 50 60 70 80 90 100 RG - Ohms IXYS REF: G_10N170(3N)10-13-08-A 5 Page

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