DataSheet26.com

IXGH10N170 PDF даташит

Спецификация IXGH10N170 изготовлена ​​​​«IXYS» и имеет функцию, называемую «High Voltage IGBT».

Детали детали

Номер произв IXGH10N170
Описание High Voltage IGBT
Производители IXYS
логотип IXYS логотип 

5 Pages
scroll

No Preview Available !

IXGH10N170 Даташит, Описание, Даташиты
High Voltage
IGBT
IXGH10N170
IXGT10N170
VCES =
IC90 =
VCE(sat)
1700V
10A
4.0V
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 16Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 • VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1 TJ = 125°C
Maximum Ratings
1700
V
1700
V
± 20 V
± 30 V
20 A
10 A
70 A
ICM = 20
@ 0.8 • VCES
110
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.0 V
50 μA
500 μA
±100 nA
2.7 4.0 V
3.4
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2008 IXYS CORPORATION, All rights reserved
DS98992A(10/08)









No Preview Available !

IXGH10N170 Даташит, Описание, Даташиты
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC(ON)
IC = 10A, VCE = 10V, Note 1
VCE = 10V, VGE = 10V
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25V, VGE = 0V, f = 1MHz
IC = 10A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
Resistive load, TJ = 25°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
td(on)
tri
td(off)
tfi
Resistive load, TJ = 125°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
RthJC
RthCS
(TO-247)
Characteristic Values
Min. Typ. Max.
3.8 6.3
33
S
A
700 pF
40 pF
14 pF
32 nC
4 nC
16 nC
30 ns
69 ns
132 ns
600 ns
30 ns
270 ns
135 ns
495 ns
1.1 °C/W
0.25 °C/W
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXGH10N170
IXGT10N170
TO-247 AD Outline
123
Terminals: 1 - Gate
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
2 - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537









No Preview Available !

IXGH10N170 Даташит, Описание, Даташиты
20
18
16
14
12
10
8
6
4
2
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
5V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
20
VGE = 15V
18 13V
11V
16
14
12 9V
10
8 7V
6
4
2 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE - Volts
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
6
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 20A
10A
5A
7 8 9 10 11 12 13 14 15
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH10N170
IXGT10N170
80
70
60
50
40
30
20
10
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.0
1.8 VGE = 15V
1.6
I C = 20A
1.4
I C =10A
1.2
1.0
0.8
0.6
-50
-25
I C = 5A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
35
TJ = - 40ºC
30 25ºC
125ºC
25
20
15
10
5
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts
IXYS REF: G_10N170(3N)10-13-08-A










Скачать PDF:

[ IXGH10N170.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
IXGH10N170High Voltage IGBTIXYS
IXYS
IXGH10N170AHigh Voltage IGBTIXYS
IXYS

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск