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PDF STR2N2VH5 Data sheet ( Hoja de datos )
| Número de pieza | STR2N2VH5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STR2N2VH5
N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5
Power MOSFET in a SOT-23 package
Datasheet — production data
Features
3
1
SOT-23
2
Order code VDS RDS(on) max
ID PTOT
STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W
• Low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
Order code
STR2N2VH5
Table 1. Device summary
Marking
Packages
STD1
SOT-23
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID023799 Rev 4
1/13
www.st.com
1 page  
STR2N2VH5
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 2 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 16 V, Tj = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 2.3 A
- 9.2 A
- 1.1 V
- 10
ns
- 24
nC
- 4.8
A
DocID023799 Rev 4
5/13
13
5 Page 
STR2N2VH5
Package mechanical data
Figure 20. SOT-23 recommended footprint (a)
0.48
2.89 0.97
0.95
0.99
SOT-23 footp_I
a. Dimensions are in mm.
DocID023799 Rev 4
11/13
13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STR2N2VH5.PDF ] | |
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