DataSheet26.com

MCH6445 PDF даташит

Спецификация MCH6445 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв MCH6445
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

5 Pages
scroll

No Preview Available !

MCH6445 Даташит, Описание, Даташиты
Ordering number : ENA1566B
MCH6445
N-Channel Power MOSFET
60V, 4A, 78m, Single MCPH6
http://onsemi.com
Features
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle1%
When mounted on ceramic substrate (1500mm2×0.8mm)
Ratings
60
±20
4
16
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-009
2.0
654
0.15
MCH6445-TL-E
MCH6445-TL-W
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0 to 0.02
ZU
1 23
0.65 0.3
123
654
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
MCPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002974/62012TKIM/D2409TKIM PE No. A1566-1/5









No Preview Available !

MCH6445 Даташит, Описание, Даташиты
MCH6445
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=4A
IS=4A, VGS=0V
min
60
Ratings
typ
1.2
3
60
74
81
505
57
37
7.3
9.8
40
24
10
1.6
2.1
0.82
max
1
±10
2.6
78
104
114
1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
PW=10ms
D.C.1%
VIN
G
VDD=30V
ID=2A
RL=15
D VOUT
P.G 50
S MCH6445
Ordering Information
Device
MCH6445-TL-E
MCH6445-TL-W
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1566-2/5









No Preview Available !

MCH6445 Даташит, Описание, Даташиты
MCH6445
ID -- VDS
4.5
4.0
3.5
3.0 3.0V
2.5
2.0
1.5
1.0 VGS=2.5V
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
170 Drain-RtoD-SSou(rocenV) o-lt-agVe,GVDSS -- V IT13789
160 Ta=25°C
150
140 ID=1A
130 2A
120
110
100
90
80
70
60
50
40
30
0 2 4 6 8 10 12
Gate-to-Source
| yfs
Voltage, VGS
| -- ID
--
V
7
5 VDS=10V
14 16
IT13791
3
2
1.0
7
Ta=
--25°C
75°C
25°C
5
3
2
0.1
7
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain
SW
Current,
Time
I-D-
-- A
ID
IT13793
7
5
td(off)
VDD=30V
VGS=10V
3
tf
2
6.0
5.5 VDS=10V
ID -- VGS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
160
Gate-to-Source Voltage,
RDS(on) --
TVaGS
--
V
IT13790
150
140
130
120
110
100
90
80
70
60
V GVS=G4V.S0=GV4,S.=I5DV10=, .1I0DAV=, 1IAD=2A
50
40
30
20
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13792
10 IS -- VSD
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
0.4 0.6 0.8 1.0
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
1.2
IT13794
f=1MHz
Ciss
3
2
10
7
5
3
2
0.1
td(on)
tr
23
5 7 1.0
23
57
Drain Current, ID -- A
IT13795
100
7
5
3
2
10
0
Coss
Crss
10 20 30 40 50 60
Drain-to-Source Voltage, VDS -- V IT13796
No. A1566-3/5










Скачать PDF:

[ MCH6445.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MCH6440N-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
MCH6444N-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
MCH6444Power MOSFET ( Transistor )ON Semiconductor
ON Semiconductor
MCH6445N-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск