CPH6355 PDF даташит
Спецификация CPH6355 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | CPH6355 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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CPH6355
Power MOSFET
–30V, 169mΩ, –3A, Single P-Channel
www.onsemi.com
Features
• Low ON-Resistance
• 4V Drive
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−30 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID −3 A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP −12 A
Power Dissipation
When mounted on ceramic substrate
(1500mm2 × 0.8mm)
Junction Temperature
PD
Tj
1.6 W
150 °C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1500mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
78.1
°C/W
VDSS
−30V
RDS(on) Max
169mΩ@ −10V
276mΩ@ −4.5V
313mΩ@ −4V
ID Max
−3A
Electrical Connection
P-Channel
1, 2, 5, 6
1 : Drain
3 2 : Drain
3 : Gate
4 : Source
5 : Drain
4 6 : Drain
Packing Type : TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
CPH6355/D
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Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
CPH6355
Conditions
ID=−1mA, VGS=0V
VDS=−30V, VGS=0V
VGS=±16V, VDS=0V
VDS=−10V, ID=−1mA
VDS=−10V, ID=−1.5A
ID=−1.5A, VGS=−10V
ID=−0.5A, VGS=−4.5V
ID=−0.5A, VGS=−4V
VDS=−10V, f=1MHz
See specified Test Circuit
VDS=−15V, VGS=−10V, ID=−3A
IS=−3A, VGS=0V
min
−30
Value
typ
−1.2
2.3
130
197
223
172
51
36
4.6
6.6
19.4
11.4
3.9
0.6
0.8
−0.95
max
−1
±10
−2.6
169
276
313
−1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --15V
ID= --1.5A
RL=10Ω
D VOUT
CPH6355
P.G 50Ω S
www.onsemi.com
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CPH6355
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