SVF2N65F PDF даташит
Спецификация SVF2N65F изготовлена «SL» и имеет функцию, называемую «650V N-CHANNEL MOSFET». |
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Детали детали
Номер произв | SVF2N65F |
Описание | 650V N-CHANNEL MOSFET |
Производители | SL |
логотип |
7 Pages
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SVF2N65F_Datasheet
2A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N65F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guarding ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 1A,650V, RDS(on)(typ)=4.1Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF2N65F
Package
TO-220F-3L
Marking
SVF2N65F
Material
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.08
Page 1 of 7
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SVF2N65F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
650
±30
2.0
1.3
8.0
25
0.20
100
-55~+150
-55~+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Rating
5.0
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
650
--
--
2.0
Typ.
--
--
--
--
Max.
--
10
±100
4.0
RDS(on) VGS=10V, ID=1.0A
-- 4.1 4.6
Ciss
Coss
Crss
VDS=25V, VGS=0V,
f=1.0MHZ
-- 261.8 --
-- 34.3 --
-- 1.3 --
td(on)
VDD=325V, RG=25Ω,
-- 10.67 --
tr ID=2.0A
-- 20.0 --
td(off)
tf
-- 12.4 --
(Note 2,3) -- 18.0 --
Qg VDS=520V, ID=2.0A,
-- 5.83 --
Qgs VGS=10V
-- 1.73 --
Qgd (Note 2,3) -- 2.0 --
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.08
Page 2 of 7
No Preview Available ! |
SVF2N65F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=2.0A,VGS=0V
Trr IS=2.0A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=2.37A, VDD=60V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
190
0.53
Max.
2.0
8.0
Unit
A
1.4 V
-- ns
-- µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.08
Page 3 of 7
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