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PDF AUIRF3710ZS Data sheet ( Hoja de datos )
| Número de pieza | AUIRF3710ZS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z
AUIRF3710ZS
Features
O Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
www.DataSheetS4pUe.ccoifmically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB
AUIRF3710Z
D2Pak
AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
59 A
42
240
160 W
Linear Derating Factor
1.1 W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
kMounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.92
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
3/19/10
1 page  
AUIRF3710Z/S
100000
10000
1000
www.DataSheet4U.c10o0m
VGS = 0V, f = 1 MHZ
C iss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
10.0
ID= 35A
8.0
VDS= 80V
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
100
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRF3710Z/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
www.DataSheet4U.com
D2Pak Part Marking Information
Part Number
IR Logo
AUIRF3710ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRF3710ZS.PDF ] | |
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