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PDF FCA47N60_F109 Data sheet ( Hoja de datos )
| Número de pieza | FCA47N60_F109 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCA47N60 / FCA47N60_F109
N-Channel SuperFET® MOSFET
June 2014
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg= 210 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
• 100% Avalanche Tested
Application
• Solar Invertor
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D
G
D
S
TO-3PN
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
FCA47N60
FCA47N60_F109
600
47
29.7
141
± 30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
Typ.
--
--
Max.
0.3
41.7
Unit
°C/W
°C/W
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C3
1
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCA47N60_F109.PDF ] | |
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